[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:UF3SC120016K3S":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},11042,"UF3SC120016K3S",null,"TO247-3","active","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 16 mohm",[12,15],[13,14],"RDS(on)","16 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-UF3SC120016K3S.pdf","UF3SC120016K3S - Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 16 mohm",12,546482,"datasheet",0,"\u002Fthumbs\u002F2d\u002F2e\u002F2d2ec26d0687678155972d3eca41b22f7c1a49e5d89bea42430d6ab5f002c133.jpg",[37],{"alias_norm":38,"kind":39},"UF3SC120016K3","base",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[48],{"pn_display":49,"pn_norm":49,"package":50,"summary":51},"UF3SC120016K4S","TO247","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 1200 V, 16 mohm",[53,56,59,62,65,69,72,75,78,81,84,88],{"pn_display":54,"pn_norm":54,"summary":55},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":57,"pn_norm":57,"summary":58},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":60,"pn_norm":60,"summary":61},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":63,"pn_norm":63,"summary":64},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":66,"pn_norm":67,"summary":68},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":70,"pn_norm":70,"summary":71},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":73,"pn_norm":73,"summary":74},"UJ3C120080K3S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm",{"pn_display":76,"pn_norm":76,"summary":77},"NCP58933ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":79,"pn_norm":79,"summary":80},"NDSH10120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",{"pn_display":82,"pn_norm":82,"summary":83},"NDSH30120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":85,"pn_norm":86,"summary":87},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":89,"pn_norm":89,"summary":90},"NDSH40120CDN","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L"]