[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NXVF1240M3TG81":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":34,"breadcrumbs":35,"related":41,"more_from_mfr":45},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},10448,"NXVF1240M3TG81",null,"active","EliteSiC Power MOSFET Module 1200 V, 40 mΩ H‐Bridge",[11],[12,13],"RDS(on)","40 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NXVF1240M3TG81.pdf","NXVF1240M3TG81 - EliteSiC Power MOSFET Module 1200 V, 40 mΩ H‐Bridge",10,367397,"datasheet",0,"\u002Fthumbs\u002Fff\u002Ff6\u002Ffff6faefd7da808046220f4efbbf011c1fc69bbb6ec0d203d737bba804dafb25.jpg",[],[],[36,40],{"name":37,"name_en":38,"path":39},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[42],{"pn_display":43,"pn_norm":43,"package":7,"summary":44},"NXVF1240M3TG01","EliteSiC Power MOSFET Module 1200 V, 40 m H-Bridge",[46,49,52,55,58,61,64,67,70,73,76,79],{"pn_display":47,"pn_norm":47,"summary":48},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":50,"pn_norm":50,"summary":51},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":53,"pn_norm":53,"summary":54},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":56,"pn_norm":56,"summary":57},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":59,"pn_norm":59,"summary":60},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":62,"pn_norm":62,"summary":63},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":65,"pn_norm":65,"summary":66},"NDSH10120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",{"pn_display":68,"pn_norm":69,"summary":66},"NDSH10120C-F155","NDSH10120CF155",{"pn_display":71,"pn_norm":71,"summary":72},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":74,"pn_norm":74,"summary":75},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":77,"pn_norm":77,"summary":78},"NDSH40120CDN","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L",{"pn_display":80,"pn_norm":81,"summary":82},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L"]