[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NXH040F120MNF1":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},10388,"NXH040F120MNF1",null,"active","Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package",[11],[12,13],"RDS(on)","40 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NXH040F120MNF1.pdf","NXH040F120MNF1 - Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package",13,1693786,"datasheet",0,"\u002Fthumbs\u002Fcb\u002F3f\u002Fcb3f78ae56361b61bc0304eb1534e40b31b53ce59f0d194dd1dfd1388e9c62f9.jpg",[34,37],{"alias_norm":35,"kind":36},"NXH040F120MNF1PG","order",{"alias_norm":38,"kind":36},"NXH040F120MNF1PTG",[],[41,45],{"name":42,"name_en":43,"path":44},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[],[48,51,54,57,60,63,66,69,72,75,78,81],{"pn_display":49,"pn_norm":49,"summary":50},"NVT2012N065M2","MOSFET - SiC Power, Single N-Channel, T2PAK",{"pn_display":52,"pn_norm":52,"summary":53},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":55,"pn_norm":55,"summary":56},"NCP58921","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26",{"pn_display":58,"pn_norm":58,"summary":59},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":61,"pn_norm":61,"summary":62},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":64,"pn_norm":64,"summary":65},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":67,"pn_norm":67,"summary":68},"NCP58935ABT",".revP1",{"pn_display":70,"pn_norm":70,"summary":71},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":73,"pn_norm":73,"summary":74},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":76,"pn_norm":76,"summary":77},"NDSH10120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",{"pn_display":79,"pn_norm":80,"summary":77},"NDSH10120C-F155","NDSH10120CF155",{"pn_display":82,"pn_norm":82,"summary":83},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L"]