[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NVHL080N120SC1":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":48},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},9929,"NVHL080N120SC1",null,"TO-247","active","Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L",[12,15],[13,14],"RDS(on)","80 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-NVHL080N120SC1.pdf","NVHL080N120SC1 - Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L",7,369895,"datasheet",0,"\u002Fthumbs\u002F1a\u002Fa6\u002F1aa670c161b863d8184e64762cd516319e5827d9d3432e07611d3c82a91630a1.jpg",[],[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[45],{"pn_display":46,"pn_norm":46,"package":8,"summary":47},"NVHL080N120SC1A","Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V M1, TO-247-3L",[49,52,55,58,61,64,67,71,75,78,81,84],{"pn_display":50,"pn_norm":50,"summary":51},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":53,"pn_norm":53,"summary":54},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":56,"pn_norm":56,"summary":57},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":59,"pn_norm":59,"summary":60},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":62,"pn_norm":62,"summary":63},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":65,"pn_norm":65,"summary":66},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":68,"pn_norm":69,"summary":70},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":72,"pn_norm":73,"summary":74},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":76,"pn_norm":76,"summary":77},"NVBG045N065SC1","Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71",{"pn_display":79,"pn_norm":79,"summary":80},"NVBG060N090SC1","Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L",{"pn_display":82,"pn_norm":82,"summary":83},"NVBG075N065SC1","Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK-7L",{"pn_display":85,"pn_norm":85,"summary":86},"NVH4L015N065SC1","Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L"]