[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NVBG045N065SC1":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":45},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},9767,"NVBG045N065SC1",null,"D2PAK","active","Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71",[12,15],[13,14],"RDS(on)","31 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-NVBG045N065SC1.pdf","NVBG045N065SC1 - Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71",8,311042,"datasheet",0,"\u002Fthumbs\u002F22\u002F0b\u002F220bfa98022f02e2e8c9af78a28cf265363fa07b7d1cdefea853517eac05ac76.jpg",[],[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[],[46,49,53,56,59,62,65,68,71,75,78,81],{"pn_display":47,"pn_norm":47,"summary":48},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":50,"pn_norm":51,"summary":52},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":54,"pn_norm":54,"summary":55},"UF3C065080T3S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm",{"pn_display":57,"pn_norm":57,"summary":58},"UF3C120150B7S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm",{"pn_display":60,"pn_norm":60,"summary":61},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":63,"pn_norm":63,"summary":64},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":66,"pn_norm":66,"summary":67},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":69,"pn_norm":69,"summary":70},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":72,"pn_norm":73,"summary":74},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":76,"pn_norm":76,"summary":77},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":79,"pn_norm":79,"summary":80},"NVT2016N065M3S","Silicon Carbide (SiC) MOSFET",{"pn_display":82,"pn_norm":82,"summary":83},"NVT2032N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M3S, T2PAK"]