[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NVBG040N120M3S":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":48},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},9765,"NVBG040N120M3S",null,"D2PAK","active","Silicon Carbide (SiC) MOSFET",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NVBG040N120M3S.pdf","NVBG040N120M3S - Silicon Carbide (SiC) MOSFET",8,231604,"datasheet",0,"\u002Fthumbs\u002F10\u002Fd0\u002F10d0fa8100c23defa14668ca83bc61a335695897209131419edeee9d1759041e.jpg",[34],{"alias_norm":35,"kind":36},"NVBG040N120M3","base",[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[45],{"pn_display":46,"pn_norm":46,"package":8,"summary":47},"NVBG040N120SC1","Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L",[49,52,56,59,62,65,68,71,74,78,81,84],{"pn_display":50,"pn_norm":50,"summary":51},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":53,"pn_norm":54,"summary":55},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":57,"pn_norm":57,"summary":58},"UF3C065080T3S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm",{"pn_display":60,"pn_norm":60,"summary":61},"UF3C120150B7S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm",{"pn_display":63,"pn_norm":63,"summary":64},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":66,"pn_norm":66,"summary":67},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":69,"pn_norm":69,"summary":70},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":72,"pn_norm":72,"summary":73},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":75,"pn_norm":76,"summary":77},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":79,"pn_norm":79,"summary":80},"NVBG045N065SC1","Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71",{"pn_display":82,"pn_norm":82,"summary":83},"NVHL020N120SC1","Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, TO-247-3L",{"pn_display":85,"pn_norm":85,"summary":86},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK"]