[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NTH4LN030N120M3S":3},{"part":4,"mfr":22,"docs":27,"aliases":36,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":48},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},8708,"NTH4LN030N120M3S",null,"TO-247","active","Silicon Carbide (SiC) MOSFET - EliteSiC, 24 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads",[12,15],[13,14],"RDS(on)","24 mΩ",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":23,"name_cn":24,"website":25,"is_domestic":26},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[28],{"id":5,"filename":29,"title":30,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ONSEMI-NTH4LN030N120M3S.pdf","NTH4LN030N120M3S - Silicon Carbide (SiC) MOSFET - EliteSiC, 24 mohm, 1200 V, M3S, TO‐247‐4L, Thin Leads",9,411781,"datasheet",0,"\u002Fthumbs\u002F66\u002Faa\u002F66aac21197d29ff294bd8f55944dd789d6922b21c4732a20e069baf2ba7fff01.jpg",[37],{"alias_norm":38,"kind":39},"NTH4LN030N120M3","base",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[],[49,52,55,58,61,64,67,70,73,76,80,83],{"pn_display":50,"pn_norm":50,"summary":51},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":53,"pn_norm":53,"summary":54},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":56,"pn_norm":56,"summary":57},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":59,"pn_norm":59,"summary":60},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":62,"pn_norm":62,"summary":63},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":65,"pn_norm":65,"summary":66},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":68,"pn_norm":68,"summary":69},"NDSH10120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",{"pn_display":71,"pn_norm":72,"summary":69},"NDSH10120C-F155","NDSH10120CF155",{"pn_display":74,"pn_norm":74,"summary":75},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":77,"pn_norm":78,"summary":79},"NDSH20120C-F155","NDSH20120CF155","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":81,"pn_norm":81,"summary":82},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":84,"pn_norm":84,"summary":85},"NDSH40120CDN","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L"]