[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NDSH30120CF155":3},{"part":4,"mfr":20,"docs":25,"aliases":34,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":49},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},7474,"NDSH30120C-F155","NDSH30120CF155",null,"TO-247","active","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",[13],[14,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":8,"doc_version":8,"published_at":8,"role":31,"outline_count":32,"thumb":33},"ONSEMI-NDSH30120CF155.pdf","NDSH30120C-F155 -  Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",6,325479,"datasheet",0,"\u002Fthumbs\u002Fff\u002Ffc\u002Ffffcae76ead859e4e3d8652aa1160cd35150deca68931a9210cc52631712e9cc.jpg",[],[],[37,41],{"name":38,"name_en":39,"path":40},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[43,46],{"pn_display":44,"pn_norm":44,"package":9,"summary":45},"NDSH30120C","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L",{"pn_display":47,"pn_norm":47,"package":9,"summary":48},"NDSH30120CDN","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L",[50,53,56,59,62,65,68,71,75,78,81,84],{"pn_display":51,"pn_norm":51,"summary":52},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":54,"pn_norm":54,"summary":55},"UF3C065080T3S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm",{"pn_display":57,"pn_norm":57,"summary":58},"UF3C120150B7S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm",{"pn_display":60,"pn_norm":60,"summary":61},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":63,"pn_norm":63,"summary":64},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":66,"pn_norm":66,"summary":67},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":69,"pn_norm":69,"summary":70},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":72,"pn_norm":73,"summary":74},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":76,"pn_norm":76,"summary":77},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":79,"pn_norm":79,"summary":80},"NVT2016N065M3S","Silicon Carbide (SiC) MOSFET",{"pn_display":82,"pn_norm":82,"summary":83},"NVT2032N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M3S, T2PAK",{"pn_display":85,"pn_norm":85,"summary":86},"UF3C065030K4S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 650 V, 27 mohm"]