[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NDSH30120C":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":52},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},7473,"NDSH30120C",null,"TO-247","active","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NDSH30120C.pdf","NDSH30120C - Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D3, TO-247-2L",4,195650,"datasheet",0,"\u002Fthumbs\u002Fb2\u002Ff5\u002Fb2f577a7039a5eb9c6e05bab3f7248cd1bf609d786dfaec4f019b789e547baf5.jpg",[34],{"alias_norm":35,"kind":36},"NDSH30120","base",[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[45,48],{"pn_display":46,"pn_norm":46,"package":8,"summary":47},"NDSH30120CDN","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L",{"pn_display":49,"pn_norm":50,"package":8,"summary":51},"NDSH30120C-F155","NDSH30120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L",[53,56,59,62,65,68,71,74,77,80,83],{"pn_display":54,"pn_norm":54,"summary":55},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",{"pn_display":57,"pn_norm":57,"summary":58},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":60,"pn_norm":60,"summary":61},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":63,"pn_norm":63,"summary":64},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection",{"pn_display":66,"pn_norm":66,"summary":67},"NCP58934ABL","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9",{"pn_display":69,"pn_norm":69,"summary":70},"NCP58935ABT",".revP1",{"pn_display":72,"pn_norm":72,"summary":73},"NDC10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die",{"pn_display":75,"pn_norm":75,"summary":76},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":78,"pn_norm":78,"summary":79},"NDSH20120C","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L",{"pn_display":81,"pn_norm":81,"summary":82},"NDSH25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L",{"pn_display":84,"pn_norm":85,"summary":86},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L"]