[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:onsemi:NDSH10120C":3},{"part":4,"mfr":19,"docs":24,"aliases":33,"alts":37,"breadcrumbs":38,"related":44,"more_from_mfr":51},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},7466,"NDSH10120C",null,"TO-247","active","Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"onsemi","安森美","https:\u002F\u002Fwww.onsemi.com",false,[25],{"id":5,"filename":26,"title":27,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ONSEMI-NDSH10120C.pdf","NDSH10120C - Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L",4,195467,"datasheet",0,"\u002Fthumbs\u002F0a\u002F47\u002F0a47679f926501e107270c0feecf18fcfd46418f0388e7e392ac6c98ac018bd5.jpg",[34],{"alias_norm":35,"kind":36},"NDSH10120","base",[],[39,43],{"name":40,"name_en":41,"path":42},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[45,48],{"pn_display":46,"pn_norm":47,"package":8,"summary":10},"NDSH10120C-F155","NDSH10120CF155",{"pn_display":49,"pn_norm":49,"package":8,"summary":50},"NDSH10170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L",[52,55,58,62,65,68,71,74,77,80,83],{"pn_display":53,"pn_norm":53,"summary":54},"NCP58920","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26",{"pn_display":56,"pn_norm":56,"summary":57},"NDC25170A","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die",{"pn_display":59,"pn_norm":60,"summary":61},"NDSH50120C-F155","NDSH50120CF155","Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L",{"pn_display":63,"pn_norm":63,"summary":64},"NVBG075N065SC1","Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK-7L",{"pn_display":66,"pn_norm":66,"summary":67},"NVT2012N065M3S","Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK",{"pn_display":69,"pn_norm":69,"summary":70},"UF3C120400B7S","Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 1200 V, 410 mohm",{"pn_display":72,"pn_norm":72,"summary":73},"UG4SC075006K4S","Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, TO247‐4, 750 V, 5.9 mohm",{"pn_display":75,"pn_norm":75,"summary":76},"UJ3C120040K3S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm",{"pn_display":78,"pn_norm":78,"summary":79},"UJ3C120080K3S","Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm",{"pn_display":81,"pn_norm":81,"summary":82},"NCP58922","Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26",{"pn_display":84,"pn_norm":84,"summary":85},"NCP58933ABT","Enhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection"]