[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRFE6VP6600N":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":55},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},14111,"MRFE6VP6600N",null,"active","600 W CW over 1.8-600 MHz RF Power Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRFE6VP6600N.pdf","MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet",22,1247976,"datasheet",0,"\u002Fthumbs\u002Fcd\u002Fd6\u002Fcdd6dd670b1b80c65279c82ebd8540ae8619671c0ca5aa5bd17918dca78b0761.jpg",[32,35],{"alias_norm":33,"kind":34},"MRFE6VP6600","base",{"alias_norm":36,"kind":37},"MRFE6VP6600NR3","order",[],[40,44],{"name":41,"name_en":42,"path":43},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[46,49,52],{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"MRFE6VP61K25H","1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors",{"pn_display":50,"pn_norm":50,"package":7,"summary":51},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"MRFE6VP6300H","R3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs",[56,60,63,66,69,72,75,78,81,84,87,90],{"pn_display":57,"pn_norm":58,"summary":59},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":61,"pn_norm":61,"summary":62},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":64,"pn_norm":64,"summary":65},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":67,"pn_norm":67,"summary":68},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":70,"pn_norm":70,"summary":71},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":73,"pn_norm":73,"summary":74},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":76,"pn_norm":76,"summary":77},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":79,"pn_norm":79,"summary":80},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":82,"pn_norm":82,"summary":83},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":85,"pn_norm":85,"summary":86},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":88,"pn_norm":88,"summary":89},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":91,"pn_norm":91,"summary":92},"MMRF1005H","1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs"]