[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF9002NR2":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":32,"breadcrumbs":33,"related":39,"more_from_mfr":42},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},14060,"MRF9002NR2",null,"eol","1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRF9002NR2.pdf","MRF9002NR2 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET - Archived",10,440257,"datasheet",0,"\u002Fthumbs\u002F4d\u002F95\u002F4d95c4b4aeeeccb91531255ea0b9710178378d7072e85a2952934c50de9eb770.jpg",[],[],[34,38],{"name":35,"name_en":36,"path":37},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[40],{"pn_display":41,"pn_norm":41,"package":7,"summary":9},"MRF9002R2",[43,46,50,53,56,59,62,65,68,71,75,78],{"pn_display":44,"pn_norm":44,"summary":45},"MMRF2007N","136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet",{"pn_display":47,"pn_norm":48,"summary":49},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":51,"pn_norm":51,"summary":52},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":54,"pn_norm":54,"summary":55},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":57,"pn_norm":57,"summary":58},"AFIC10275N","AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet",{"pn_display":60,"pn_norm":60,"summary":61},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":63,"pn_norm":63,"summary":64},"MHL9236","800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers",{"pn_display":66,"pn_norm":66,"summary":67},"MMRF2010N","1030-1090 MHz, 250 W Peak, 50 V Data Sheet",{"pn_display":69,"pn_norm":69,"summary":70},"MRF1518","520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":72,"pn_norm":73,"summary":74},"MRF18030A-2","MRF18030A2","1800-1880 MHz, 30 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFET",{"pn_display":76,"pn_norm":76,"summary":77},"MRF5S9100","880 MHz, 20 W Avg., 26 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":79,"pn_norm":79,"summary":80},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs"]