[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF8P9300H":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},14032,"MRF8P9300H",null,"active","R6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRF8P9300H.pdf","MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs",18,923800,"datasheet",0,"\u002Fthumbs\u002F96\u002Fc4\u002F96c4145d341379514a0f1e19e5a7c8e53bef7ceb837bb29eda24e6df4135455f.jpg",[32,35,38],{"alias_norm":33,"kind":34},"MRF8P9300","base",{"alias_norm":36,"kind":37},"MRF8P9300HR6","order",{"alias_norm":39,"kind":37},"MRF8P9300HSR6",[],[42,46],{"name":43,"name_en":44,"path":45},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[48,51],{"pn_display":49,"pn_norm":49,"package":7,"summary":50},"MRF8P9040N","R1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MRF8P9210N","R3 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor",[55,59,62,65,68,71,74,77,80,83,86,89],{"pn_display":56,"pn_norm":57,"summary":58},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":60,"pn_norm":60,"summary":61},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":63,"pn_norm":63,"summary":64},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":66,"pn_norm":66,"summary":67},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":69,"pn_norm":69,"summary":70},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":72,"pn_norm":72,"summary":73},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":75,"pn_norm":75,"summary":76},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":78,"pn_norm":78,"summary":79},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":81,"pn_norm":81,"summary":82},"MHL9318","3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier",{"pn_display":84,"pn_norm":84,"summary":85},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":87,"pn_norm":87,"summary":88},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":90,"pn_norm":90,"summary":91},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs"]