[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF6S9160H":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":69},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13970,"MRF6S9160H",null,"eol","880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRF6S9160H.pdf","MRF6S9160HR3, MRF6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived",12,592213,"datasheet",0,"\u002Fthumbs\u002Fba\u002F09\u002Fba09d04da7b33a0abf72545b62527e78b2e297fb14eb19f4a947f3297389eb33.jpg",[32,35,38],{"alias_norm":33,"kind":34},"MRF6S9160","base",{"alias_norm":36,"kind":37},"MRF6S9160HR3","order",{"alias_norm":39,"kind":37},"MRF6S9160HSR3",[],[42,46],{"name":43,"name_en":44,"path":45},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[48,51,54,57,60,63,66],{"pn_display":49,"pn_norm":49,"package":7,"summary":50},"MRF6S9045","MR1, MRF6S9045MBR1 880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MRF6S9045N","880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"MRF6S9060","MR1, MRF6S9060MBR1 880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"MRF6S9060N","880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":61,"pn_norm":61,"package":7,"summary":62},"MRF6S9125","MR1, MRF6S9125MBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":64,"pn_norm":64,"package":7,"summary":65},"MRF6S9125N","865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs",{"pn_display":67,"pn_norm":67,"package":7,"summary":68},"MRF6S9130H","880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",[70,73,77,80,83,86,89,92,95,98,101,104],{"pn_display":71,"pn_norm":71,"summary":72},"MMRF2007N","136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet",{"pn_display":74,"pn_norm":75,"summary":76},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":78,"pn_norm":78,"summary":79},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":81,"pn_norm":81,"summary":82},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":84,"pn_norm":84,"summary":85},"AFIC10275N","AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet",{"pn_display":87,"pn_norm":87,"summary":88},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":90,"pn_norm":90,"summary":91},"MHL9236","800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers",{"pn_display":93,"pn_norm":93,"summary":94},"MHL9838N","800-925 MHz, 8.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":96,"pn_norm":96,"summary":97},"MMRF2010N","1030-1090 MHz, 250 W Peak, 50 V Data Sheet",{"pn_display":99,"pn_norm":99,"summary":100},"MRF1518","520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":102,"pn_norm":102,"summary":103},"MRF1535T1","520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":105,"pn_norm":106,"summary":107},"MRF18030A-2","MRF18030A2","1800-1880 MHz, 30 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFET"]