[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF6S9125N":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":68},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13967,"MRF6S9125N",null,"eol","865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MRF6S9125N.pdf","MRF6S9125NR1, MRF6S9125NBR1 865-960 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived",23,1122244,"datasheet",0,"\u002Fthumbs\u002Fea\u002Fb2\u002Feab21b2246c183601a923a600fe82d377364d362fe4935701ecde31cc2179514.jpg",[32,35,38],{"alias_norm":33,"kind":34},"MRF6S9125","base",{"alias_norm":36,"kind":37},"MRF6S9125NBR1","order",{"alias_norm":39,"kind":37},"MRF6S9125NR1",[],[42,46],{"name":43,"name_en":44,"path":45},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[48,51,54,57,60,62,65],{"pn_display":49,"pn_norm":49,"package":7,"summary":50},"MRF6S9045","MR1, MRF6S9045MBR1 880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MRF6S9045N","880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":55,"pn_norm":55,"package":7,"summary":56},"MRF6S9060","MR1, MRF6S9060MBR1 880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":58,"pn_norm":58,"package":7,"summary":59},"MRF6S9060N","880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":33,"pn_norm":33,"package":7,"summary":61},"MR1, MRF6S9125MBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":63,"pn_norm":63,"package":7,"summary":64},"MRF6S9130H","880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":66,"pn_norm":66,"package":7,"summary":67},"MRF6S9160H","880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",[69,72,75,78,81,84,87,90,93,96,99,103],{"pn_display":70,"pn_norm":70,"summary":71},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":73,"pn_norm":73,"summary":74},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":76,"pn_norm":76,"summary":77},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":79,"pn_norm":79,"summary":80},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":82,"pn_norm":82,"summary":83},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":85,"pn_norm":85,"summary":86},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":88,"pn_norm":88,"summary":89},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":91,"pn_norm":91,"summary":92},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":94,"pn_norm":94,"summary":95},"MRF1517","520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":97,"pn_norm":97,"summary":98},"MRF1550T1","175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":100,"pn_norm":101,"summary":102},"MRF21085-2","MRF210852","2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET",{"pn_display":104,"pn_norm":104,"summary":105},"MRF373","470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs"]