[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF5S19130H2":3},{"part":4,"mfr":17,"docs":23,"aliases":31,"alts":32,"breadcrumbs":33,"related":39,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},13902,"MRF5S19130H-2","MRF5S19130H2",null,"active","MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":10,"pages":26,"size_bytes":27,"lang":8,"doc_version":8,"published_at":8,"role":28,"outline_count":29,"thumb":30},"NXP-MRF5S19130H2.pdf",10,471074,"datasheet",0,"\u002Fthumbs\u002F55\u002F42\u002F5542ba95ba786d4247b859357ab13c9330d90279a6094aeffc7bcf1de88d9689.jpg",[],[],[34,38],{"name":35,"name_en":36,"path":37},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[40,43,46,49,52,56,59],{"pn_display":41,"pn_norm":41,"package":8,"summary":42},"MRF5S19100H","1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":44,"pn_norm":44,"package":8,"summary":45},"MRF5S19100L","1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs",{"pn_display":47,"pn_norm":47,"package":8,"summary":48},"MRF5S19130","1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs",{"pn_display":50,"pn_norm":50,"package":8,"summary":51},"MRF5S19130H","1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":53,"pn_norm":54,"package":8,"summary":55},"MRF5S19130H-1","MRF5S19130H1","MRF5S19130HR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET",{"pn_display":57,"pn_norm":57,"package":8,"summary":58},"MRF5S19150","1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs",{"pn_display":60,"pn_norm":60,"package":8,"summary":61},"MRF5S19150H","R3 1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET",[63,66,69,72,75,78,81,84,87,90,93,96],{"pn_display":64,"pn_norm":64,"summary":65},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":67,"pn_norm":67,"summary":68},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":70,"pn_norm":70,"summary":71},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":73,"pn_norm":73,"summary":74},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":76,"pn_norm":76,"summary":77},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":79,"pn_norm":79,"summary":80},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":82,"pn_norm":82,"summary":83},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":85,"pn_norm":85,"summary":86},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":88,"pn_norm":88,"summary":89},"MRF1517","520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":91,"pn_norm":91,"summary":92},"MRF1550T1","175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":94,"pn_norm":94,"summary":95},"MRF373","470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":97,"pn_norm":97,"summary":98},"MRF5S21100H","2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs"]