[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MRF18085A1":3},{"part":4,"mfr":17,"docs":23,"aliases":32,"alts":33,"breadcrumbs":34,"related":40,"more_from_mfr":82},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},13831,"MRF18085A-1","MRF18085A1",null,"eol","1805-1880 MHz, 85 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFET",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":26,"pages":27,"size_bytes":28,"lang":8,"doc_version":8,"published_at":8,"role":29,"outline_count":30,"thumb":31},"NXP-MRF18085A1.pdf","MRF18085ALR3 1805-1880 MHz, 85 W, 26 V, GSM\u002FGSM EDGE  Lateral N-Channel RF Power MOSFET - Archived",8,764420,"datasheet",0,"\u002Fthumbs\u002F77\u002F63\u002F7763ca2098ad2424f2635afe4d185420eacfb378ce312fa1ec4bc358083becc1.jpg",[],[],[35,39],{"name":36,"name_en":37,"path":38},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[41,44,48,51,54,57,60,63,66,69,73,76,79],{"pn_display":42,"pn_norm":42,"package":8,"summary":43},"MRF18030A","1800-1880 MHz, 30 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFETs",{"pn_display":45,"pn_norm":46,"package":8,"summary":47},"MRF18030A-1","MRF18030A1","1800-1880 MHz, 30 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFET",{"pn_display":49,"pn_norm":50,"package":8,"summary":47},"MRF18030A-2","MRF18030A2",{"pn_display":52,"pn_norm":52,"package":8,"summary":53},"MRF18030B","1930-1990 MHz, 30 W, 26 V GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFETs",{"pn_display":55,"pn_norm":55,"package":8,"summary":56},"MRF18060A","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":58,"pn_norm":59,"package":8,"summary":56},"MRF18060A-1","MRF18060A1",{"pn_display":61,"pn_norm":62,"package":8,"summary":56},"MRF18060A-2","MRF18060A2",{"pn_display":64,"pn_norm":64,"package":8,"summary":65},"MRF18060B","1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs",{"pn_display":67,"pn_norm":67,"package":8,"summary":68},"MRF18085A","1805-1880 MHz, 85 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFETs",{"pn_display":70,"pn_norm":71,"package":8,"summary":72},"MRF18085A-2","MRF18085A2","MRF18085ALSR3 1805-1880 MHz, 85 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFET",{"pn_display":74,"pn_norm":74,"package":8,"summary":75},"MRF18085B","1930-1990 MHz, 85 W, 26 V, GSM\u002FGSM EDGE Lateral N-Channel RF Power MOSFETs",{"pn_display":77,"pn_norm":77,"package":8,"summary":78},"MRF18090A","1805-1880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":80,"pn_norm":80,"package":8,"summary":81},"MRF18090B","1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETS",[83,86,89,92,95,98,101,104,107,110,113],{"pn_display":84,"pn_norm":84,"summary":85},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":87,"pn_norm":87,"summary":88},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":90,"pn_norm":90,"summary":91},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":93,"pn_norm":93,"summary":94},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":96,"pn_norm":96,"summary":97},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":99,"pn_norm":99,"summary":100},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":102,"pn_norm":102,"summary":103},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":105,"pn_norm":105,"summary":106},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":108,"pn_norm":108,"summary":109},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":111,"pn_norm":111,"summary":112},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":114,"pn_norm":114,"summary":115},"MMRF1005H","1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs"]