[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MMRF5018HS":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":40,"breadcrumbs":41,"related":47,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13537,"MMRF5018HS",null,"active","125 W CW over 1-2700 MHz, 50 V Data Sheet",[],[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MMRF5018HS.pdf","MMRF5018HS 125 W CW over 1-2700 MHz, 50 V Data Sheet",13,201923,"datasheet",0,"\u002Fthumbs\u002Fc3\u002F6b\u002Fc36b2d224193a8754c1082cd486af80e31e2306a384412808e4f334fdaf852b0.jpg",[32,35,37],{"alias_norm":33,"kind":34},"MMRF5018","base",{"alias_norm":36,"kind":34},"MMRF5018H",{"alias_norm":38,"kind":39},"MMRF5018HSR5","order",[],[42,46],{"name":43,"name_en":44,"path":45},"分立器件","Discretes","discrete",{"name":13,"name_en":14,"path":15},[48,51],{"pn_display":49,"pn_norm":49,"package":7,"summary":50},"MMRF5014H","125 W CW, 50 V RF Power GaN Data Sheet",{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"MMRF5017HS","30-2200 MHz, 125 W CW, 50 V GaN Data Sheet",[55,59,63,67,71,75,78,80,82,84,87,90],{"pn_display":56,"pn_norm":57,"summary":58},"A2G22S160-01S","A2G22S16001S","1800–2200 MHz, 32 W AVG., 48 V Airfast RF Power GaN Transistor Data Sheet",{"pn_display":60,"pn_norm":61,"summary":62},"A2G22S251-01S","A2G22S25101S","1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet",{"pn_display":64,"pn_norm":65,"summary":66},"A2G35S160-01S","A2G35S16001S","3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet",{"pn_display":68,"pn_norm":69,"summary":70},"A2G35S200-01S","A2G35S20001S","3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet",{"pn_display":72,"pn_norm":73,"summary":74},"A3G20S350-01S","A3G20S35001S","2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet",{"pn_display":76,"pn_norm":76,"summary":77},"A5G07H800W19N","Airfast RF Power GaN Amplifier",{"pn_display":79,"pn_norm":79,"summary":77},"A5G08H800W19N",{"pn_display":81,"pn_norm":81,"summary":77},"A5G21H605W19N",{"pn_display":83,"pn_norm":83,"summary":77},"A5G26H606W19N",{"pn_display":85,"pn_norm":85,"summary":86},"A5G26S004N","2300-2690 MHz, 24 dBm Avg, 48 V Data Sheet",{"pn_display":88,"pn_norm":88,"summary":89},"A5G35S004N","3300–4300 MHz, 24.5 dBm Avg, 48 V Data Sheet",{"pn_display":91,"pn_norm":91,"summary":92},"GD3160","Advanced IGBT\u002FSiC gate driver"]