[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MHT2012N":3},{"part":4,"mfr":18,"docs":24,"aliases":32,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":50},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":7,"params":10,"features":13,"pins":7,"updated_at":14,"category_name":15,"category_name_en":16,"category_path":17},13189,"MHT2012N",null,"PQFN","active",[11],[12,8],"封装",[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":19,"name_en":20,"name_cn":21,"website":22,"is_domestic":23},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[25],{"id":5,"filename":26,"title":6,"pages":27,"size_bytes":28,"lang":7,"doc_version":7,"published_at":7,"role":29,"outline_count":30,"thumb":31},"NXP-MHT2012N.pdf",14,444629,"datasheet",0,"\u002Fthumbs\u002F0b\u002F4a\u002F0b4af74d85aee29342b6ce80779528238b333e549318784c47870892a4acbcc0.jpg",[33,36],{"alias_norm":34,"kind":35},"MHT2012","base",{"alias_norm":37,"kind":38},"MHT2012NT1","order",[],[41,45],{"name":42,"name_en":43,"path":44},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":15,"name_en":16,"path":17},[47],{"pn_display":48,"pn_norm":48,"package":7,"summary":49},"MHT2000N","2450 MHz, 25 W CW, 28 V Industrial Heating, Rugged RF LDMOS Integrated Power Amplifiers",[51,54,57,60,63,66,69,72,75,78,81,84],{"pn_display":52,"pn_norm":52,"summary":53},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":55,"pn_norm":55,"summary":56},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":58,"pn_norm":58,"summary":59},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":61,"pn_norm":61,"summary":62},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":64,"pn_norm":64,"summary":65},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":67,"pn_norm":67,"summary":68},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":70,"pn_norm":70,"summary":71},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":73,"pn_norm":73,"summary":74},"MRF1550T1","175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":76,"pn_norm":76,"summary":77},"MRF373","470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":79,"pn_norm":79,"summary":80},"MRF5S21100H","2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":82,"pn_norm":82,"summary":83},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":85,"pn_norm":85,"summary":86},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs"]