[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MHPA18010":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":32,"breadcrumbs":33,"related":39,"more_from_mfr":47},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},13177,"MHPA18010",null,"eol","1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-MHPA18010.pdf","MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived",4,77700,"datasheet",0,"\u002Fthumbs\u002F33\u002F62\u002F336291be63e1ce98079190a684d82f28cd6e3d12b8978994cd8597e6e6430403.jpg",[],[],[34,38],{"name":35,"name_en":36,"path":37},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[40,42,45],{"pn_display":41,"pn_norm":41,"package":7,"summary":9},"MHPA18010N",{"pn_display":43,"pn_norm":43,"package":7,"summary":44},"MHPA19010","1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier",{"pn_display":46,"pn_norm":46,"package":7,"summary":44},"MHPA19010N",[48,51,54,57,61,64,67,70,73,77,81,84],{"pn_display":49,"pn_norm":49,"summary":50},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":52,"pn_norm":52,"summary":53},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":55,"pn_norm":55,"summary":56},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":58,"pn_norm":59,"summary":60},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":62,"pn_norm":62,"summary":63},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":65,"pn_norm":65,"summary":66},"MRFG35010MT1","3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT",{"pn_display":68,"pn_norm":68,"summary":69},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":71,"pn_norm":71,"summary":72},"MMRF2007N","136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet",{"pn_display":74,"pn_norm":75,"summary":76},"MRF19030-1","MRF190301","1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":78,"pn_norm":79,"summary":80},"MRF21085-2","MRF210852","2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET",{"pn_display":82,"pn_norm":82,"summary":83},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":85,"pn_norm":85,"summary":86},"MRF9030M","R1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs"]