[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:MC33GD3100":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":56},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},12670,"MC33GD3100",null,"active","Advanced IGBT\u002FSiC gate driver, short data sheet",[11],[12,13],"工作温度","-40 ~ 125 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"NXP-MC33GD3100.pdf","MC33GD3100 , Advanced IGBT\u002FSiC gate driver, short data sheet",21,486097,"datasheet",23,"\u002Fthumbs\u002F28\u002F37\u002F2837a395b580de9e95657f8360e631bd28fd1b4fc74295b7a194116f038f484d.jpg",[35,38,40,42],{"alias_norm":36,"kind":37},"MC33GD3100A3EK","order",{"alias_norm":39,"kind":37},"MC33GD3100B3EK",{"alias_norm":41,"kind":37},"MC33GD3100BEK",{"alias_norm":43,"kind":37},"MC33GD3100EK",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[52],{"pn_display":53,"pn_norm":53,"package":54,"summary":55},"MC33GD3000","SOT684","Three phase field effect transistor predriver",[57,61,64,67,71,75,77,80,84,88,92,96],{"pn_display":58,"pn_norm":59,"summary":60},"A3G20S350-01S","A3G20S35001S","2110-2170 MHz, 59 W Avg, 48 V GaN Data Sheet",{"pn_display":62,"pn_norm":62,"summary":63},"A5G26H606W19N","Airfast RF Power GaN Amplifier",{"pn_display":65,"pn_norm":65,"summary":66},"GD3160","Advanced IGBT\u002FSiC gate driver",{"pn_display":68,"pn_norm":69,"summary":70},"A2G22S160-01S","A2G22S16001S","1800–2200 MHz, 32 W AVG., 48 V Airfast RF Power GaN Transistor Data Sheet",{"pn_display":72,"pn_norm":73,"summary":74},"A2G35S160-01S","A2G35S16001S","3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet",{"pn_display":76,"pn_norm":76,"summary":63},"A5G18H610W19N",{"pn_display":78,"pn_norm":78,"summary":79},"GD3162","short data sheet",{"pn_display":81,"pn_norm":82,"summary":83},"A2G22S190-01S","A2G22S19001S","1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet",{"pn_display":85,"pn_norm":86,"summary":87},"A2G22S251-01S","A2G22S25101S","1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet",{"pn_display":89,"pn_norm":90,"summary":91},"A3G20S250-01S","A3G20S25001S","1800-2200 MHz, 45 W Avg, 48 V GaN Data Sheet",{"pn_display":93,"pn_norm":94,"summary":95},"A3G22H400-04S","A3G22H40004S","1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet",{"pn_display":97,"pn_norm":98,"summary":99},"A3G35H100-04S","A3G35H10004S","3400-3600 MHz, 14 W Avg, 48 V GaN Data Sheet"]