[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2T21S26012S":3},{"part":4,"mfr":17,"docs":23,"aliases":31,"alts":35,"breadcrumbs":36,"related":42,"more_from_mfr":46},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},11214,"A2T21S260-12S","A2T21S26012S",null,"active","2110-2170 MHz, 65 W Avg, 28 V Airfast RF Power LDMOS Transistor Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":10,"pages":26,"size_bytes":27,"lang":8,"doc_version":8,"published_at":8,"role":28,"outline_count":29,"thumb":30},"NXP-A2T21S26012S.pdf",16,471287,"datasheet",0,"\u002Fthumbs\u002F7b\u002Fb5\u002F7bb5a8f5dc4f380e8f4bcad964e7c600d53ac427854f38ef529905794f6193a0.jpg",[32],{"alias_norm":33,"kind":34},"A2T21S26012","base",[],[37,41],{"name":38,"name_en":39,"path":40},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[43],{"pn_display":44,"pn_norm":44,"package":8,"summary":45},"A2T21S260W12N","2110-2200 MHz, 56 W Avg, 28 V Data Sheet",[47,50,53,56,59,62,65,68,71,74,77,80],{"pn_display":48,"pn_norm":48,"summary":49},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":51,"pn_norm":51,"summary":52},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":54,"pn_norm":54,"summary":55},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":57,"pn_norm":57,"summary":58},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":60,"pn_norm":60,"summary":61},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":63,"pn_norm":63,"summary":64},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":66,"pn_norm":66,"summary":67},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":69,"pn_norm":69,"summary":70},"MRF1550T1","175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":72,"pn_norm":72,"summary":73},"MRF373","470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs",{"pn_display":75,"pn_norm":75,"summary":76},"MRF5S21100H","2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":78,"pn_norm":78,"summary":79},"MRF6S19100H","R3, MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":81,"pn_norm":81,"summary":82},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs"]