[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2T21H141W24S":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":46},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},11207,"A2T21H141W24S",null,"active","2110-2200 MHz, 36 W Avg, 28 V Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-A2T21H141W24S.pdf","A2T21H141W24S 2110-2200 MHz, 36 W Avg, 28 V Data Sheet",10,351188,"datasheet",0,"\u002Fthumbs\u002F91\u002F66\u002F9166c775da7636e9dfd8c5eafd4e0f46259f4f5a1f4a6ddf9ff59eac7afe0e3d.jpg",[32,35],{"alias_norm":33,"kind":34},"A2T21H141W24","base",{"alias_norm":36,"kind":37},"A2T21H141W24SR3","order",[],[40,44],{"name":41,"name_en":42,"path":43},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[],[47,51,54,57,60,63,66,69,72,75,78,81],{"pn_display":48,"pn_norm":49,"summary":50},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":52,"pn_norm":52,"summary":53},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":55,"pn_norm":55,"summary":56},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":58,"pn_norm":58,"summary":59},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":61,"pn_norm":61,"summary":62},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":64,"pn_norm":64,"summary":65},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":67,"pn_norm":67,"summary":68},"MHL19926","1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier",{"pn_display":70,"pn_norm":70,"summary":71},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":73,"pn_norm":73,"summary":74},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":76,"pn_norm":76,"summary":77},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":79,"pn_norm":79,"summary":80},"MMRF1004N","1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":82,"pn_norm":82,"summary":83},"MMRF1005H","1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs"]