[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2T21H10025S":3},{"part":4,"mfr":17,"docs":23,"aliases":32,"alts":36,"breadcrumbs":37,"related":43,"more_from_mfr":44},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},11205,"A2T21H100-25S","A2T21H10025S",null,"active","2110–2170 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":26,"pages":27,"size_bytes":28,"lang":8,"doc_version":8,"published_at":8,"role":29,"outline_count":30,"thumb":31},"NXP-A2T21H10025S.pdf","A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet",16,443275,"datasheet",0,"\u002Fthumbs\u002F2a\u002Fab\u002F2aab2c6fe87a2b8bfec511f447cf5ea7e1d7458e53dee9b5eb1f4bffc9ae937d.jpg",[33],{"alias_norm":34,"kind":35},"A2T21H10025","base",[],[38,42],{"name":39,"name_en":40,"path":41},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[],[45,49,52,55,58,61,64,67,70,73,76,79],{"pn_display":46,"pn_norm":47,"summary":48},"MRF18060A-2","MRF18060A2","1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET",{"pn_display":50,"pn_norm":50,"summary":51},"MRFG35002N6","3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT",{"pn_display":53,"pn_norm":53,"summary":54},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":56,"pn_norm":56,"summary":57},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":59,"pn_norm":59,"summary":60},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":62,"pn_norm":62,"summary":63},"MHL18336","1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier",{"pn_display":65,"pn_norm":65,"summary":66},"MHL21336NN","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier",{"pn_display":68,"pn_norm":68,"summary":69},"MHV5IC1810N","R2 1805-1990 MHz, 5 W Avg., 28 V GSM\u002FGSM EDGE RF LDMOS Wideband Integrated Power Amplifier",{"pn_display":71,"pn_norm":71,"summary":72},"MHVIC910HR2","960 MHz, 10 W, 26 V GSM Cellular RF LDMOS Integrated Circuit",{"pn_display":74,"pn_norm":74,"summary":75},"MMRF1006H","10-500 MHz, 1000 W, 50 V Data Sheet",{"pn_display":77,"pn_norm":77,"summary":78},"MMRF1013H","2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs",{"pn_display":80,"pn_norm":80,"summary":81},"MMRF2004NB","2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier"]