[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2T14H45023N":3},{"part":4,"mfr":17,"docs":23,"aliases":32,"alts":36,"breadcrumbs":37,"related":43,"more_from_mfr":44},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":12,"pins":8,"updated_at":13,"category_name":14,"category_name_en":15,"category_path":16},11188,"A2T14H450-23N","A2T14H45023N",null,"active","1427-1517 MHz, 93 W Avg, 31 V Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":18,"name_en":19,"name_cn":20,"website":21,"is_domestic":22},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[24],{"id":5,"filename":25,"title":26,"pages":27,"size_bytes":28,"lang":8,"doc_version":8,"published_at":8,"role":29,"outline_count":30,"thumb":31},"NXP-A2T14H45023N.pdf","A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Data Sheet",17,389243,"datasheet",0,"\u002Fthumbs\u002F30\u002F62\u002F3062d2525b65e8cf1fc3a0d84cc974fe6e33709b305cec8f1948668aa91f25bf.jpg",[33],{"alias_norm":34,"kind":35},"A2T14H45023","base",[],[38,42],{"name":39,"name_en":40,"path":41},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":14,"name_en":15,"path":16},[],[45,48,51,54,58,61,64,67,70,73,77,81],{"pn_display":46,"pn_norm":46,"summary":47},"A2I20H060N","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",{"pn_display":49,"pn_norm":49,"summary":50},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":52,"pn_norm":52,"summary":53},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":55,"pn_norm":56,"summary":57},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":59,"pn_norm":59,"summary":60},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":62,"pn_norm":62,"summary":63},"MMRF2007N","136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet",{"pn_display":65,"pn_norm":65,"summary":66},"MRFG35010MT1","3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT",{"pn_display":68,"pn_norm":68,"summary":69},"MW4IC001N","R4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":71,"pn_norm":71,"summary":72},"A2I35H060N","3400-3600 MHz, 10 W Avg, 28 V Data Sheet",{"pn_display":74,"pn_norm":75,"summary":76},"A2T21H100-25S","A2T21H10025S","2110–2170 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet",{"pn_display":78,"pn_norm":79,"summary":80},"A2V07H400-04N","A2V07H40004N","420-851 MHz, 107 W Avg, 48 V Data Sheet",{"pn_display":82,"pn_norm":82,"summary":83},"AFIC10275N","AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet"]