[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:nxp:A2I20H060N":3},{"part":4,"mfr":16,"docs":22,"aliases":31,"alts":38,"breadcrumbs":39,"related":45,"more_from_mfr":49},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":11,"pins":7,"updated_at":12,"category_name":13,"category_name_en":14,"category_path":15},11174,"A2I20H060N",null,"active","1800-2200 MHz, 12 W Avg, 28 V Data Sheet",[],[],"2026-10-10T13:01:01.608Z","射频功率器件","RF Power","rf.power",{"slug":17,"name_en":18,"name_cn":19,"website":20,"is_domestic":21},"nxp","NXP","恩智浦","https:\u002F\u002Fwww.nxp.com",false,[23],{"id":5,"filename":24,"title":25,"pages":26,"size_bytes":27,"lang":7,"doc_version":7,"published_at":7,"role":28,"outline_count":29,"thumb":30},"NXP-A2I20H060N.pdf","A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet",31,984804,"datasheet",0,"\u002Fthumbs\u002F37\u002F1f\u002F371f790fb2c69aa479c9931cba756dbbf21383fca0df2b0268ca733c8df55184.jpg",[32,35],{"alias_norm":33,"kind":34},"A2I20H060","base",{"alias_norm":36,"kind":37},"A2I20H060NR1","order",[],[40,44],{"name":41,"name_en":42,"path":43},"射频 \u002F 无线","RF \u002F Wireless","rf",{"name":13,"name_en":14,"path":15},[46],{"pn_display":47,"pn_norm":47,"package":7,"summary":48},"A2I20H080N","1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet",[50,54,57,60,63,66,69,72,75,79,82,85],{"pn_display":51,"pn_norm":52,"summary":53},"MRF9060-2","MRF90602","MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET",{"pn_display":55,"pn_norm":55,"summary":56},"A2I25H060N","2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet",{"pn_display":58,"pn_norm":58,"summary":59},"MMRF2007N","136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet",{"pn_display":61,"pn_norm":61,"summary":62},"MRF6S19120H","1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs",{"pn_display":64,"pn_norm":64,"summary":65},"MRFE6VP61K25N","MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet",{"pn_display":67,"pn_norm":67,"summary":68},"MRFG35010MT1","3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT",{"pn_display":70,"pn_norm":70,"summary":71},"MW4IC001N","R4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers",{"pn_display":73,"pn_norm":73,"summary":74},"A2I35H060N","3400-3600 MHz, 10 W Avg, 28 V Data Sheet",{"pn_display":76,"pn_norm":77,"summary":78},"A2T21H100-25S","A2T21H10025S","2110–2170 MHz, 18 W Avg., 28 V Airfast RF Power LDMOS Transistor Data Sheet",{"pn_display":80,"pn_norm":80,"summary":81},"AFIC10275N","AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V Airfast RF LDMOS Wideband Integrated Power Amplifiers Data Sheet",{"pn_display":83,"pn_norm":83,"summary":84},"AFIC901N","30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet",{"pn_display":86,"pn_norm":86,"summary":87},"MHL21336N","2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier"]