ES2DR115

Name: ES2DR115
Brand: Nexperia

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ES3DP115
GAN041-650WSBQ650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063-650WSAQ650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080-650EBEZ650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140-650EBEZ650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140-650FBEZ650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN190-650EBEZ650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190-650FBEZ650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN3R2-100CBEAZ100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
GAN7R0-150LBEZ150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
GANB012-040CBAZ40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)
GANB1R2-040QBAZ40 V, 1.2 mOhm bi-directional Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)