[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC8H065DLF":3},{"part":4,"mfr":22,"docs":28,"aliases":37,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5100,"STPSC8H065DLF",null,"POWERFLAT8X8","active","650 V power Schottky silicon carbide diode",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":31,"pages":32,"size_bytes":33,"lang":7,"doc_version":7,"published_at":7,"role":34,"outline_count":35,"thumb":36},"ST-STPSC8H065DLF.pdf","Datasheet -  STPSC8H065DLF -  650 V power Schottky silicon carbide diode",12,386319,"datasheet",7,"\u002Fthumbs\u002Fd7\u002Ff6\u002Fd7f6a44dfd0eabf3a42d95fa84b5bbe2e4d57ed204e057dd3680a4b35b7e00c5.jpg",[38,41,43],{"alias_norm":39,"kind":40},"STPSC8H065","base",{"alias_norm":42,"kind":40},"STPSC8H065D",{"alias_norm":44,"kind":40},"STPSC8H065DL",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[53,56,59],{"pn_display":39,"pn_norm":39,"package":54,"summary":55},"DPAK","650 V, 8 A high surge silicon carbide power Schottky diode",{"pn_display":57,"pn_norm":57,"package":58,"summary":10},"STPSC8H065C","TO-220AB",{"pn_display":60,"pn_norm":61,"package":54,"summary":62},"STPSC8H065-Y","STPSC8H065Y","Automotive 650 V, 8 A high surge silicon carbide power Schottky diode",[64,67,70,74,78,82,86,89,91,95,99,102],{"pn_display":65,"pn_norm":65,"summary":66},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":68,"pn_norm":68,"summary":69},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":71,"pn_norm":72,"summary":73},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":75,"pn_norm":76,"summary":77},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":79,"pn_norm":80,"summary":81},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":83,"pn_norm":84,"summary":85},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":87,"pn_norm":87,"summary":88},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":90,"pn_norm":90,"summary":88},"GANSPIN612",{"pn_display":92,"pn_norm":93,"summary":94},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":96,"pn_norm":97,"summary":98},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":100,"pn_norm":100,"summary":101},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":103,"pn_norm":103,"summary":104},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]