[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC6G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":72},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5088,"STPSC6G065",null,"active","650 V, 6 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","6 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC6G065.pdf","Datasheet - STPSC6G065 - 650 V, 6 A high surge silicon carbide power Schottky diode",10,546390,"datasheet",12,"\u002Fthumbs\u002F4a\u002F45\u002F4a45d5ccafa1972960e9d68857b38a5d03f19c8e024b5d6c6fa4f5ddc92ba33e.jpg",[41],{"alias_norm":42,"kind":43},"STPSC6G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,56,60,63,66,69],{"pn_display":53,"pn_norm":54,"package":7,"summary":55},"STPSC6C065D-L","STPSC6C065DL","650 V power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":58,"package":7,"summary":59},"STPSC6C065-Y","STPSC6C065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":62,"summary":9},"STPSC6H065","DPAK",{"pn_display":64,"pn_norm":65,"package":7,"summary":59},"STPSC6H065BY-TR","STPSC6H065BYTR",{"pn_display":67,"pn_norm":67,"package":68,"summary":55},"STPSC6H065DLF","POWERFLAT8X8",{"pn_display":70,"pn_norm":70,"package":7,"summary":71},"STPSC6TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[73,76,80,84,88,91,93,97,101,104,107,109],{"pn_display":74,"pn_norm":74,"summary":75},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":77,"pn_norm":78,"summary":79},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":81,"pn_norm":82,"summary":83},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":85,"pn_norm":86,"summary":87},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":89,"pn_norm":89,"summary":90},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":92,"pn_norm":92,"summary":90},"GANSPIN612",{"pn_display":94,"pn_norm":95,"summary":96},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":98,"pn_norm":99,"summary":100},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":102,"pn_norm":102,"summary":103},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":105,"pn_norm":105,"summary":106},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":108,"pn_norm":108,"summary":103},"MASTERGAN4L",{"pn_display":110,"pn_norm":110,"summary":111},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]