[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC4H065":3},{"part":4,"mfr":25,"docs":31,"aliases":39,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":92},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5082,"STPSC4H065",null,"DPAK","active","650 V, 4 A high surge silicon carbide power Schottky diode",[12,15,18],[13,14],"VDS","650 V",[16,17],"ID","4 A",[19,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":35,"thumb":38},"ST-STPSC4H065.pdf","Datasheet - STPSC4H065 - 650 V, 4 A high surge silicon carbide power Schottky diode",14,325098,"datasheet","\u002Fthumbs\u002F55\u002F9c\u002F559c799c3dae7539534ba98ec89b8b340bff7194b9c42af8d3a4be780f4c7fdb.jpg",[40,43,45],{"alias_norm":41,"kind":42},"STPSC4H065B","order",{"alias_norm":44,"kind":42},"STPSC4H065D",{"alias_norm":46,"kind":42},"STPSC4H065DI",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[55,59,63,67,71,74,78,81,83,86,89],{"pn_display":56,"pn_norm":56,"package":57,"summary":58},"STPSC40065C","TO-247","650 V power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":61,"package":57,"summary":62},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":64,"package":65,"summary":66},"STPSC40G12","DO-247","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":68,"pn_norm":69,"package":65,"summary":70},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":72,"pn_norm":72,"package":57,"summary":73},"STPSC40H12C","1200 V, 40 A power Schottky silicon carbide diode",{"pn_display":75,"pn_norm":76,"package":57,"summary":77},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",{"pn_display":79,"pn_norm":80,"package":7,"summary":58},"STPSC4C065D-L","STPSC4C065DL",{"pn_display":82,"pn_norm":82,"package":7,"summary":10},"STPSC4G065",{"pn_display":84,"pn_norm":84,"package":85,"summary":10},"STPSC4G065UF","SMB",{"pn_display":87,"pn_norm":87,"package":85,"summary":88},"STPSC4G065UFY","Automotive 650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":90,"pn_norm":90,"package":91,"summary":58},"STPSC4H065DLF","POWERFLAT8X8",[93,96,100,104,108,112,115,117,121,125,128,131],{"pn_display":94,"pn_norm":94,"summary":95},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":97,"pn_norm":98,"summary":99},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":101,"pn_norm":102,"summary":103},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":105,"pn_norm":106,"summary":107},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":109,"pn_norm":110,"summary":111},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":113,"pn_norm":113,"summary":114},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":116,"pn_norm":116,"summary":114},"GANSPIN612",{"pn_display":118,"pn_norm":119,"summary":120},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":122,"pn_norm":123,"summary":124},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":126,"pn_norm":126,"summary":127},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":129,"pn_norm":129,"summary":130},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":132,"pn_norm":132,"summary":127},"MASTERGAN4L"]