[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC4G065UFY":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":51,"breadcrumbs":52,"related":58,"more_from_mfr":62},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5081,"STPSC4G065UFY",null,"SMB","active","Automotive 650 V, 4 A high surge silicon carbide power Schottky diode",[12,15,18,21],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","4 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC4G065UFY.pdf","Datasheet - STPSC4G065UFY - Automotive 650 V, 4 A high surge silicon carbide power Schottky diode",9,504627,"datasheet",12,"\u002Fthumbs\u002Fe7\u002F90\u002Fe790c4ba9768de9b438d206e1ce8c50c007edab15dff9c3fb1c975a9b56e111d.jpg",[44,47,49],{"alias_norm":45,"kind":46},"STPSC4G065","base",{"alias_norm":48,"kind":46},"STPSC4G065U",{"alias_norm":50,"kind":46},"STPSC4G065UF",[],[53,57],{"name":54,"name_en":55,"path":56},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[59,61],{"pn_display":45,"pn_norm":45,"package":7,"summary":60},"650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":50,"pn_norm":50,"package":8,"summary":60},[63,66,70,74,77,79,83,87,90,93,95,98],{"pn_display":64,"pn_norm":64,"summary":65},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":67,"pn_norm":68,"summary":69},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":71,"pn_norm":72,"summary":73},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":75,"pn_norm":75,"summary":76},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":78,"pn_norm":78,"summary":76},"GANSPIN612",{"pn_display":80,"pn_norm":81,"summary":82},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":84,"pn_norm":85,"summary":86},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":88,"pn_norm":88,"summary":89},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":91,"pn_norm":91,"summary":92},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":94,"pn_norm":94,"summary":89},"MASTERGAN4L",{"pn_display":96,"pn_norm":96,"summary":97},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":99,"pn_norm":100,"summary":101},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]