[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC4G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":90},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5079,"STPSC4G065",null,"active","650 V, 4 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","4 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC4G065.pdf","Datasheet - STPSC4G065 - 650 V, 4 A high surge silicon carbide power Schottky diode",10,540728,"datasheet",12,"\u002Fthumbs\u002F82\u002F09\u002F8209a82a81615d02a75c188fb25de5b127ad049a9d5bbc924f88dadf8ac1f1e5.jpg",[41],{"alias_norm":42,"kind":43},"STPSC4G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,56,60,64,68,71,75,78,81,84,87],{"pn_display":53,"pn_norm":53,"package":54,"summary":55},"STPSC40065C","TO-247","650 V power Schottky silicon carbide diode",{"pn_display":57,"pn_norm":58,"package":54,"summary":59},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":62,"summary":63},"STPSC40G12","DO-247","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":65,"pn_norm":66,"package":62,"summary":67},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":54,"summary":70},"STPSC40H12C","1200 V, 40 A power Schottky silicon carbide diode",{"pn_display":72,"pn_norm":73,"package":54,"summary":74},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",{"pn_display":76,"pn_norm":77,"package":7,"summary":55},"STPSC4C065D-L","STPSC4C065DL",{"pn_display":79,"pn_norm":79,"package":80,"summary":9},"STPSC4G065UF","SMB",{"pn_display":82,"pn_norm":82,"package":80,"summary":83},"STPSC4G065UFY","Automotive 650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":85,"pn_norm":85,"package":86,"summary":9},"STPSC4H065","DPAK",{"pn_display":88,"pn_norm":88,"package":89,"summary":55},"STPSC4H065DLF","POWERFLAT8X8",[91,94,98,102,106,110,113,115,119,123,126,129],{"pn_display":92,"pn_norm":92,"summary":93},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":95,"pn_norm":96,"summary":97},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":99,"pn_norm":100,"summary":101},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":103,"pn_norm":104,"summary":105},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":107,"pn_norm":108,"summary":109},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":111,"pn_norm":111,"summary":112},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":114,"pn_norm":114,"summary":112},"GANSPIN612",{"pn_display":116,"pn_norm":117,"summary":118},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":120,"pn_norm":121,"summary":122},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":124,"pn_norm":124,"summary":125},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":127,"pn_norm":127,"summary":128},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":130,"pn_norm":130,"summary":125},"MASTERGAN4L"]