[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC40H12CY":3},{"part":4,"mfr":23,"docs":29,"aliases":38,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":18,"pins":8,"updated_at":19,"category_name":20,"category_name_en":21,"category_path":22},5076,"STPSC40H12C-Y","STPSC40H12CY",null,"TO-247","active","40 A 1200 V power Schottky silicon carbide diode",[13,16],[14,15],"工作温度","-40 ~ 175 °C",[17,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":24,"name_en":25,"name_cn":26,"website":27,"is_domestic":28},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[30],{"id":5,"filename":31,"title":32,"pages":33,"size_bytes":34,"lang":8,"doc_version":8,"published_at":8,"role":35,"outline_count":36,"thumb":37},"ST-STPSC40H12CY.pdf","Datasheet - STPSC40H12C-Y -  40 A 1200 V power Schottky silicon carbide diode",10,257284,"datasheet",6,"\u002Fthumbs\u002F96\u002Fbd\u002F96bd57a2f3484b7cb8bc0f7b4dec22eb8ca2fc7def05988390d078b65ffb0e75.jpg",[39,42],{"alias_norm":40,"kind":41},"STPSC40H12","base",{"alias_norm":43,"kind":41},"STPSC40H12C",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":20,"name_en":21,"path":22},[52],{"pn_display":43,"pn_norm":43,"package":9,"summary":53},"1200 V, 40 A power Schottky silicon carbide diode",[55,58,61,64,68,71,75,79,83,87,90,92],{"pn_display":56,"pn_norm":56,"summary":57},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":62,"pn_norm":62,"summary":63},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":65,"pn_norm":66,"summary":67},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":69,"summary":70},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"summary":74},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":80,"pn_norm":81,"summary":82},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":84,"pn_norm":85,"summary":86},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":88,"pn_norm":88,"summary":89},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":91,"pn_norm":91,"summary":89},"GANSPIN612",{"pn_display":93,"pn_norm":94,"summary":95},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]