[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC40G12Y":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":73},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5074,"STPSC40G12-Y","STPSC40G12Y",null,"DO-247","active","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",[13,16,19,22],[14,15],"工作温度","-55 ~ 175 °C",[17,18],"VDS","1200 V",[20,21],"ID","40 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC40G12Y.pdf","Datasheet - STPSC40G12-Y - Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",10,499441,"datasheet",9,"\u002Fthumbs\u002F9c\u002F33\u002F9c335be632662969427c4a370b6a4b18d8d66ead115d11a3ccba0f00998fa24a.jpg",[45],{"alias_norm":46,"kind":47},"STPSC40G12","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,60,64,66,69],{"pn_display":57,"pn_norm":57,"package":58,"summary":59},"STPSC40065C","TO-247","650 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":62,"package":58,"summary":63},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":46,"pn_norm":46,"package":9,"summary":65},"1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":67,"pn_norm":67,"package":58,"summary":68},"STPSC40H12C","1200 V, 40 A power Schottky silicon carbide diode",{"pn_display":70,"pn_norm":71,"package":58,"summary":72},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",[74,77,81,85,89,93,96,98,102,106,109,112],{"pn_display":75,"pn_norm":75,"summary":76},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":78,"pn_norm":79,"summary":80},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":82,"pn_norm":83,"summary":84},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":86,"pn_norm":87,"summary":88},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":90,"pn_norm":91,"summary":92},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":94,"pn_norm":94,"summary":95},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":97,"pn_norm":97,"summary":95},"GANSPIN612",{"pn_display":99,"pn_norm":100,"summary":101},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":103,"pn_norm":104,"summary":105},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":107,"pn_norm":107,"summary":108},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":110,"pn_norm":110,"summary":111},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":113,"pn_norm":113,"summary":108},"MASTERGAN4L"]