[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC40G12":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":92},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5075,"STPSC40G12",null,"DO-247","active","1200 V, 40 A power Schottky high surge silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","40 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC40G12.pdf","Datasheet - STPSC40G12 - 1200 V, 40 A power Schottky high surge silicon carbide diode",10,497815,"datasheet",9,"\u002Fthumbs\u002F35\u002F2b\u002F352b10ae3b1afb407497f4e8463f0e528d25b4864952298960f2aac4f502f087.jpg",[44],{"alias_norm":45,"kind":46},"STPSC40G12WL","order",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[55,59,63,67,70,74,77,80,83,86,89],{"pn_display":56,"pn_norm":56,"package":57,"summary":58},"STPSC40065C","TO-247","650 V power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":61,"package":57,"summary":62},"STPSC40065C-Y","STPSC40065CY","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":8,"summary":66},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":68,"pn_norm":68,"package":57,"summary":69},"STPSC40H12C","1200 V, 40 A power Schottky silicon carbide diode",{"pn_display":71,"pn_norm":72,"package":57,"summary":73},"STPSC40H12C-Y","STPSC40H12CY","40 A 1200 V power Schottky silicon carbide diode",{"pn_display":75,"pn_norm":76,"package":7,"summary":58},"STPSC4C065D-L","STPSC4C065DL",{"pn_display":78,"pn_norm":78,"package":7,"summary":79},"STPSC4G065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":81,"pn_norm":81,"package":82,"summary":79},"STPSC4G065UF","SMB",{"pn_display":84,"pn_norm":84,"package":82,"summary":85},"STPSC4G065UFY","Automotive 650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":87,"pn_norm":87,"package":88,"summary":79},"STPSC4H065","DPAK",{"pn_display":90,"pn_norm":90,"package":91,"summary":58},"STPSC4H065DLF","POWERFLAT8X8",[93,96,100,104,108,112,115,117,121,125,128,131],{"pn_display":94,"pn_norm":94,"summary":95},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":97,"pn_norm":98,"summary":99},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":101,"pn_norm":102,"summary":103},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":105,"pn_norm":106,"summary":107},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":109,"pn_norm":110,"summary":111},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":113,"pn_norm":113,"summary":114},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":116,"pn_norm":116,"summary":114},"GANSPIN612",{"pn_display":118,"pn_norm":119,"summary":120},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":122,"pn_norm":123,"summary":124},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":126,"pn_norm":126,"summary":127},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":129,"pn_norm":129,"summary":130},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":132,"pn_norm":132,"summary":127},"MASTERGAN4L"]