[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC30G065G2Y":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":47,"breadcrumbs":48,"related":54,"more_from_mfr":64},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5066,"STPSC30G065G2Y",null,"D2PAK","active","650 V, 30 A high surge silicon carbide power Schottky diode",[12,15,18,21],[13,14],"工作温度","-55 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","30 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC30G065G2Y.pdf","Datasheet - STPSC30G065G2Y - 650 V, 30 A high surge silicon carbide power Schottky diode",11,585378,"datasheet",13,"\u002Fthumbs\u002F19\u002F29\u002F19296897edc5338e2b8a220f1097038c1d043fa9b5c3d4923ca5e56f6cf913f9.jpg",[44],{"alias_norm":45,"kind":46},"STPSC30G065G2","base",[],[49,53],{"name":50,"name_en":51,"path":52},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[55,58,61],{"pn_display":56,"pn_norm":56,"package":57,"summary":10},"STPSC30G065","DO-247",{"pn_display":59,"pn_norm":59,"package":7,"summary":60},"STPSC30G065L2Y","Automotive 650 V, 30 A high surge silicon carbide power Schottky diode",{"pn_display":62,"pn_norm":63,"package":57,"summary":60},"STPSC30G065-Y","STPSC30G065Y",[65,68,72,76,79,81,85,88,91,93,96,100],{"pn_display":66,"pn_norm":66,"summary":67},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":69,"pn_norm":70,"summary":71},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":73,"pn_norm":74,"summary":75},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":77,"pn_norm":77,"summary":78},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":80,"pn_norm":80,"summary":78},"GANSPIN612",{"pn_display":82,"pn_norm":83,"summary":84},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":86,"pn_norm":86,"summary":87},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":89,"pn_norm":89,"summary":90},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":92,"pn_norm":92,"summary":87},"MASTERGAN4L",{"pn_display":94,"pn_norm":94,"summary":95},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":97,"pn_norm":98,"summary":99},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package",{"pn_display":101,"pn_norm":102,"summary":103},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package"]