[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20H12Y":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":105},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5055,"STPSC20H12-Y","STPSC20H12Y",null,"active","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","20 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC20H12Y.pdf","Datasheet - STPSC20H12-Y - Automotive 1200 V, 20 A, silicon carbide power Schottky diode",14,473769,"datasheet",9,"\u002Fthumbs\u002Fa9\u002F0e\u002Fa90e9998e0a8c6889564d9631111ed216dd329350ee967b7bfc0a3fd8b339572.jpg",[42],{"alias_norm":43,"kind":44},"STPSC20H12","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53,57,61,65,68,71,75,78,81,84,87,90,93,95,98,101],{"pn_display":54,"pn_norm":54,"package":55,"summary":56},"STPSC20065","DO-247","650 V power Schottky silicon carbide diode",{"pn_display":58,"pn_norm":58,"package":59,"summary":60},"STPSC20065C","TO-247","650 V, dual 10 A, power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":55,"summary":64},"STPSC20065-Y","STPSC20065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":66,"pn_norm":66,"package":59,"summary":67},"STPSC2006CW","600 V power Schottky silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":55,"summary":70},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"package":55,"summary":74},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":76,"package":55,"summary":77},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":79,"pn_norm":79,"package":8,"summary":80},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":82,"pn_norm":83,"package":55,"summary":80},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":85,"pn_norm":85,"package":86,"summary":56},"STPSC20H065C","TO-220AB",{"pn_display":88,"pn_norm":88,"package":59,"summary":89},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":91,"pn_norm":92,"package":86,"summary":64},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":43,"pn_norm":43,"package":59,"summary":94},"1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":96,"pn_norm":96,"package":59,"summary":97},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":99,"pn_norm":99,"package":59,"summary":100},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":102,"pn_norm":103,"package":8,"summary":104},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",[106,109,113,117,121,125,128,130,134,138,141,144],{"pn_display":107,"pn_norm":107,"summary":108},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":110,"pn_norm":111,"summary":112},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":114,"pn_norm":115,"summary":116},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":118,"pn_norm":119,"summary":120},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":122,"pn_norm":123,"summary":124},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":126,"pn_norm":126,"summary":127},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":129,"pn_norm":129,"summary":127},"GANSPIN612",{"pn_display":131,"pn_norm":132,"summary":133},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":135,"pn_norm":136,"summary":137},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":139,"pn_norm":139,"summary":140},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":142,"pn_norm":142,"summary":143},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":145,"pn_norm":145,"summary":140},"MASTERGAN4L"]