[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20H12G2TR":3},{"part":4,"mfr":26,"docs":32,"aliases":41,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":21,"pins":8,"updated_at":22,"category_name":23,"category_name_en":24,"category_path":25},5059,"STPSC20H12G2-TR","STPSC20H12G2TR",null,"active","1200 V, 20 A, silicon carbide power Schottky diode",[12,15,18],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","1200 V",[19,20],"ID","20 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":27,"name_en":28,"name_cn":29,"website":30,"is_domestic":31},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[33],{"id":5,"filename":34,"title":35,"pages":36,"size_bytes":37,"lang":8,"doc_version":8,"published_at":8,"role":38,"outline_count":39,"thumb":40},"ST-STPSC20H12G2TR.pdf","Datasheet - STPSC20H12G2-TR - 1200 V, 20 A, silicon carbide power Schottky diode",11,376999,"datasheet",7,"\u002Fthumbs\u002Fba\u002F34\u002Fba340bf0d96f72a7971103acda7e38ea34493b82da31e434a7951e8c3f0958dc.jpg",[42],{"alias_norm":43,"kind":44},"STPSC20H12G2","base",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":23,"name_en":24,"path":25},[53,57,60,63],{"pn_display":54,"pn_norm":54,"package":55,"summary":56},"STPSC20H12","TO-247","1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":58,"pn_norm":58,"package":55,"summary":59},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":61,"pn_norm":61,"package":55,"summary":62},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":8,"summary":66},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[68,71,74,77,81,84,88,92,96,100,104,107],{"pn_display":69,"pn_norm":69,"summary":70},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":72,"pn_norm":72,"summary":73},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":75,"pn_norm":75,"summary":76},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":78,"pn_norm":79,"summary":80},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":82,"pn_norm":82,"summary":83},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":85,"pn_norm":86,"summary":87},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":89,"pn_norm":90,"summary":91},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":93,"pn_norm":94,"summary":95},"A2TBH45M65W3-FC","A2TBH45M65W3FC","ACEPACK 2 power module, triple boost (650 V, 49 mΩ typ.) plus half-bridge topology (650 V, 23.5 mΩ typ.) SiC Power MOSFET gen. 3 with NTC and capacitance",{"pn_display":97,"pn_norm":98,"summary":99},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":101,"pn_norm":102,"summary":103},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":105,"pn_norm":105,"summary":106},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":108,"pn_norm":108,"summary":106},"GANSPIN612"]