[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20H12CWY":3},{"part":4,"mfr":22,"docs":28,"aliases":37,"alts":45,"breadcrumbs":46,"related":52,"more_from_mfr":65},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5058,"STPSC20H12CWY",null,"TO-247","active","20 A 1200 V power Schottky silicon carbide diode",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":31,"pages":32,"size_bytes":33,"lang":7,"doc_version":7,"published_at":7,"role":34,"outline_count":35,"thumb":36},"ST-STPSC20H12CWY.pdf","Datasheet - STPSC20H12CWY - 20 A 1200 V power Schottky silicon carbide diode",10,259047,"datasheet",6,"\u002Fthumbs\u002Fc3\u002Ff4\u002Fc3f42d744c38864ef04951e2b43e5395aabf1d45ee11d78e30041605250c2511.jpg",[38,41,43],{"alias_norm":39,"kind":40},"STPSC20H12","base",{"alias_norm":42,"kind":40},"STPSC20H12C",{"alias_norm":44,"kind":40},"STPSC20H12CW",[],[47,51],{"name":48,"name_en":49,"path":50},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[53,55,57,61],{"pn_display":39,"pn_norm":39,"package":8,"summary":54},"1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":42,"pn_norm":42,"package":8,"summary":56},"1200 V power Schottky silicon carbide diode",{"pn_display":58,"pn_norm":59,"package":7,"summary":60},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":62,"pn_norm":63,"package":7,"summary":64},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[66,69,72,76,80,84,88,91,93,97,101,104],{"pn_display":67,"pn_norm":67,"summary":68},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":70,"pn_norm":70,"summary":71},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":73,"pn_norm":74,"summary":75},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":77,"pn_norm":78,"summary":79},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":81,"pn_norm":82,"summary":83},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":85,"pn_norm":86,"summary":87},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":89,"pn_norm":89,"summary":90},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":92,"pn_norm":92,"summary":90},"GANSPIN612",{"pn_display":94,"pn_norm":95,"summary":96},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":98,"pn_norm":99,"summary":100},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":102,"pn_norm":102,"summary":103},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":105,"pn_norm":105,"summary":106},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver"]