[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20G065Y":3},{"part":4,"mfr":29,"docs":35,"aliases":44,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":67},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":9,"lifecycle":10,"summary":11,"params":12,"features":24,"pins":8,"updated_at":25,"category_name":26,"category_name_en":27,"category_path":28},5047,"STPSC20G065-Y","STPSC20G065Y",null,"DO-247","active","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",[13,16,19,22],[14,15],"工作温度","-55 ~ 175 °C",[17,18],"VDS","650 V",[20,21],"ID","20 A",[23,9],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":30,"name_en":31,"name_cn":32,"website":33,"is_domestic":34},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[36],{"id":5,"filename":37,"title":38,"pages":39,"size_bytes":40,"lang":8,"doc_version":8,"published_at":8,"role":41,"outline_count":42,"thumb":43},"ST-STPSC20G065Y.pdf","Datasheet - STPSC20G065-Y - Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",12,790834,"datasheet",13,"\u002Fthumbs\u002F5f\u002F92\u002F5f92c1b7bf39c2780e37ee383a7351f8e4fbfeb3a7c06070b4912f30170666cd.jpg",[45],{"alias_norm":46,"kind":47},"STPSC20G065","base",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":26,"name_en":27,"path":28},[56,58,61,64],{"pn_display":46,"pn_norm":46,"package":9,"summary":57},"650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":59,"pn_norm":59,"package":9,"summary":60},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":62,"pn_norm":62,"package":8,"summary":63},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":65,"pn_norm":66,"package":9,"summary":63},"STPSC20G12-Y","STPSC20G12Y",[68,71,74,77,81,85,89,93,96,98,102,106],{"pn_display":69,"pn_norm":69,"summary":70},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":72,"pn_norm":72,"summary":73},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":75,"pn_norm":75,"summary":76},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":78,"pn_norm":79,"summary":80},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":82,"pn_norm":83,"summary":84},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":86,"pn_norm":87,"summary":88},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":90,"pn_norm":91,"summary":92},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":94,"pn_norm":94,"summary":95},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":97,"pn_norm":97,"summary":95},"GANSPIN612",{"pn_display":99,"pn_norm":100,"summary":101},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":103,"pn_norm":104,"summary":105},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":107,"pn_norm":107,"summary":108},"MASTERGAN1","High power density 600V Half bridge driver with two enhancement mode GaN HEMT"]