[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC2006CW":3},{"part":4,"mfr":19,"docs":25,"aliases":33,"alts":39,"breadcrumbs":40,"related":46,"more_from_mfr":100},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},5046,"STPSC2006CW",null,"TO-247","active","600 V power Schottky silicon carbide diode",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":10,"pages":28,"size_bytes":29,"lang":7,"doc_version":7,"published_at":7,"role":30,"outline_count":31,"thumb":32},"ST-STPSC2006CW.pdf",7,76882,"datasheet",19,"\u002Fthumbs\u002F44\u002F34\u002F4434ece0cf012a5d87920547fc689da18dff5b83918daa5a82e562c21cfb9333.jpg",[34,37],{"alias_norm":35,"kind":36},"STPSC2006","base",{"alias_norm":38,"kind":36},"STPSC2006C",[],[41,45],{"name":42,"name_en":43,"path":44},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[47,51,54,58,61,65,68,71,74,77,80,83,86,89,92,96],{"pn_display":48,"pn_norm":48,"package":49,"summary":50},"STPSC20065","DO-247","650 V power Schottky silicon carbide diode",{"pn_display":52,"pn_norm":52,"package":8,"summary":53},"STPSC20065C","650 V, dual 10 A, power Schottky silicon carbide diode",{"pn_display":55,"pn_norm":56,"package":49,"summary":57},"STPSC20065-Y","STPSC20065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":59,"package":49,"summary":60},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":62,"pn_norm":63,"package":49,"summary":64},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":66,"pn_norm":66,"package":49,"summary":67},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":7,"summary":70},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":72,"pn_norm":73,"package":49,"summary":70},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":75,"pn_norm":75,"package":76,"summary":50},"STPSC20H065C","TO-220AB",{"pn_display":78,"pn_norm":78,"package":8,"summary":79},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":81,"pn_norm":82,"package":76,"summary":57},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":84,"pn_norm":84,"package":8,"summary":85},"STPSC20H12","1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":87,"pn_norm":87,"package":8,"summary":88},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":90,"pn_norm":90,"package":8,"summary":91},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":93,"pn_norm":94,"package":7,"summary":95},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":97,"pn_norm":98,"package":7,"summary":99},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[101,104,108,112,116,120,123,125,129,133,136,139],{"pn_display":102,"pn_norm":102,"summary":103},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":105,"pn_norm":106,"summary":107},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":109,"pn_norm":110,"summary":111},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":113,"pn_norm":114,"summary":115},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":117,"pn_norm":118,"summary":119},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":121,"pn_norm":121,"summary":122},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":124,"pn_norm":124,"summary":122},"GANSPIN612",{"pn_display":126,"pn_norm":127,"summary":128},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":130,"pn_norm":131,"summary":132},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":134,"pn_norm":134,"summary":135},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":137,"pn_norm":137,"summary":138},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":140,"pn_norm":140,"summary":135},"MASTERGAN4L"]