[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC20065C":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":50,"breadcrumbs":51,"related":57,"more_from_mfr":110},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5045,"STPSC20065C",null,"TO-247","active","650 V, dual 10 A, power Schottky silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","10 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC20065C.pdf","Datasheet - STPSC20065C -  650 V, dual 10 A, power Schottky silicon carbide diode",10,228840,"datasheet",6,"\u002Fthumbs\u002F37\u002F05\u002F3705d0f1b55c74fec525f8e810090f02f618f13bb0da30a39c3dbb54d1c149ce.jpg",[44,47],{"alias_norm":45,"kind":46},"STPSC20065","base",{"alias_norm":48,"kind":49},"STPSC20065CWL","order",[],[52,56],{"name":53,"name_en":54,"path":55},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[58,61,65,68,71,75,78,81,84,87,90,93,96,99,102,106],{"pn_display":45,"pn_norm":45,"package":59,"summary":60},"DO-247","650 V power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":59,"summary":64},"STPSC20065-Y","STPSC20065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":66,"pn_norm":66,"package":8,"summary":67},"STPSC2006CW","600 V power Schottky silicon carbide diode",{"pn_display":69,"pn_norm":69,"package":59,"summary":70},"STPSC20G065","650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"package":59,"summary":74},"STPSC20G065-Y","STPSC20G065Y","Automotive 650 V, 20 A high surge silicon carbide power Schottky diode",{"pn_display":76,"pn_norm":76,"package":59,"summary":77},"STPSC20G12","1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":79,"pn_norm":79,"package":7,"summary":80},"STPSC20G12L2Y","Automotive 1200 V, 20 A power Schottky high surge silicon carbide diode",{"pn_display":82,"pn_norm":83,"package":59,"summary":80},"STPSC20G12-Y","STPSC20G12Y",{"pn_display":85,"pn_norm":85,"package":86,"summary":60},"STPSC20H065C","TO-220AB",{"pn_display":88,"pn_norm":88,"package":8,"summary":89},"STPSC20H065CWLY","Automotive 20 A 650 V power Schottky silicon carbide diode",{"pn_display":91,"pn_norm":92,"package":86,"summary":64},"STPSC20H065C-Y","STPSC20H065CY",{"pn_display":94,"pn_norm":94,"package":8,"summary":95},"STPSC20H12","1200 V, 20 A power Schottky silicon carbide diode",{"pn_display":97,"pn_norm":97,"package":8,"summary":98},"STPSC20H12C","1200 V power Schottky silicon carbide diode",{"pn_display":100,"pn_norm":100,"package":8,"summary":101},"STPSC20H12CWY","20 A 1200 V power Schottky silicon carbide diode",{"pn_display":103,"pn_norm":104,"package":7,"summary":105},"STPSC20H12G2-TR","STPSC20H12G2TR","1200 V, 20 A, silicon carbide power Schottky diode",{"pn_display":107,"pn_norm":108,"package":7,"summary":109},"STPSC20H12-Y","STPSC20H12Y","Automotive 1200 V, 20 A, silicon carbide power Schottky diode",[111,114,118,122,125,127,131,135,138,141,143,146],{"pn_display":112,"pn_norm":112,"summary":113},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":115,"pn_norm":116,"summary":117},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. 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SiC Power MOSFET with rectifier diode and NTC",{"pn_display":136,"pn_norm":136,"summary":137},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":139,"pn_norm":139,"summary":140},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":142,"pn_norm":142,"summary":137},"MASTERGAN4L",{"pn_display":144,"pn_norm":144,"summary":145},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":147,"pn_norm":148,"summary":149},"SCT012W90G3-4AG","SCT012W90G34AG","Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package"]