[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC12G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":78},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5031,"STPSC12G065",null,"active","650 V, 12 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","12 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC12G065.pdf","Datasheet - STPSC12G065 - 650 V, 12 A high surge silicon carbide power Schottky diode",10,560704,"datasheet",12,"\u002Fthumbs\u002F3f\u002Fec\u002F3fec77d707e1528eaf3f23e16a15e1182178539816d287ce4b73b6935aa52cdf.jpg",[41],{"alias_norm":42,"kind":43},"STPSC12G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,55,59,63,67,71,73,75],{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"STPSC12065","650 V, 12 A power Schottky silicon carbide diode",{"pn_display":56,"pn_norm":57,"package":7,"summary":58},"STPSC12065-Y","STPSC12065Y","Automotive 650 V, 12 A, silicon carbide power Schottky diode",{"pn_display":60,"pn_norm":61,"package":7,"summary":62},"STPSC12C065D-L","STPSC12C065DL","650 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":7,"summary":66},"STPSC12C065-Y","STPSC12C065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":68,"pn_norm":69,"package":7,"summary":70},"STPSC12G065-Y","STPSC12G065Y","Automotive 650 V, 12 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":72,"package":7,"summary":62},"STPSC12H065",{"pn_display":74,"pn_norm":74,"package":7,"summary":62},"STPSC12H065C",{"pn_display":76,"pn_norm":77,"package":7,"summary":66},"STPSC12H065-Y","STPSC12H065Y",[79,82,86,90,94,97,99,103,107,110,113,115],{"pn_display":80,"pn_norm":80,"summary":81},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":83,"pn_norm":84,"summary":85},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":87,"pn_norm":88,"summary":89},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":91,"pn_norm":92,"summary":93},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":95,"pn_norm":95,"summary":96},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":98,"pn_norm":98,"summary":96},"GANSPIN612",{"pn_display":100,"pn_norm":101,"summary":102},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":104,"pn_norm":105,"summary":106},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":108,"pn_norm":108,"summary":109},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":111,"pn_norm":111,"summary":112},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":114,"pn_norm":114,"summary":109},"MASTERGAN4L",{"pn_display":116,"pn_norm":116,"summary":117},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]