[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC12065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":48,"breadcrumbs":49,"related":55,"more_from_mfr":124},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5027,"STPSC12065",null,"active","650 V, 12 A power Schottky silicon carbide diode",[11,14,17],[12,13],"工作温度","-40 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","12 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC12065.pdf","Datasheet - STPSC12065 - 650 V, 12 A power Schottky silicon carbide diode",14,444150,"datasheet",9,"\u002Fthumbs\u002F25\u002F54\u002F2554b364d90db23f967357ef0c8d760fa41fa88cc42f8225ddfe687d59027dd7.jpg",[41,44,46],{"alias_norm":42,"kind":43},"STPSC12065D","order",{"alias_norm":45,"kind":43},"STPSC12065G",{"alias_norm":47,"kind":43},"STPSC12065G2",[],[50,54],{"name":51,"name_en":52,"path":53},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[56,59,63,67,71,74,78,81,84,86,88,91,94,98,101,105,109,113,116,120],{"pn_display":57,"pn_norm":57,"package":7,"summary":58},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":60,"package":61,"summary":62},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":7,"summary":66},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":68,"pn_norm":69,"package":70,"summary":66},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":72,"pn_norm":72,"package":7,"summary":73},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":75,"pn_norm":76,"package":7,"summary":77},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":79,"pn_norm":79,"package":80,"summary":73},"STPSC10H065","DPAK",{"pn_display":82,"pn_norm":83,"package":7,"summary":66},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":85,"pn_norm":85,"package":61,"summary":62},"STPSC10H065DLF",{"pn_display":87,"pn_norm":87,"package":7,"summary":73},"STPSC10H065G2",{"pn_display":89,"pn_norm":90,"package":7,"summary":66},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":92,"pn_norm":92,"package":80,"summary":93},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":95,"pn_norm":96,"package":80,"summary":97},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":99,"pn_norm":99,"package":100,"summary":93},"STPSC10H12C","TO-247",{"pn_display":102,"pn_norm":103,"package":104,"summary":97},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":106,"pn_norm":107,"package":104,"summary":108},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":110,"pn_norm":111,"package":7,"summary":112},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":114,"pn_norm":114,"package":7,"summary":115},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",{"pn_display":117,"pn_norm":118,"package":7,"summary":119},"STPSC12065-Y","STPSC12065Y","Automotive 650 V, 12 A, silicon carbide power Schottky diode",{"pn_display":121,"pn_norm":122,"package":7,"summary":123},"STPSC12C065D-L","STPSC12C065DL","650 V power Schottky silicon carbide diode",[125,128,132,136,140,144,147,149,153,157,160,163],{"pn_display":126,"pn_norm":126,"summary":127},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":129,"pn_norm":130,"summary":131},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":133,"pn_norm":134,"summary":135},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":137,"pn_norm":138,"summary":139},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":141,"pn_norm":142,"summary":143},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":145,"pn_norm":145,"summary":146},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":148,"pn_norm":148,"summary":146},"GANSPIN612",{"pn_display":150,"pn_norm":151,"summary":152},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":154,"pn_norm":155,"summary":156},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":158,"pn_norm":158,"summary":159},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":161,"pn_norm":161,"summary":162},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":164,"pn_norm":164,"summary":159},"MASTERGAN4L"]