[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H12C":3},{"part":4,"mfr":22,"docs":28,"aliases":36,"alts":43,"breadcrumbs":44,"related":50,"more_from_mfr":106},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":17,"pins":7,"updated_at":18,"category_name":19,"category_name_en":20,"category_path":21},5022,"STPSC10H12C",null,"TO-247","active","1200 V power Schottky silicon carbide diode",[12,15],[13,14],"工作温度","-40 ~ 175 °C",[16,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":23,"name_en":24,"name_cn":25,"website":26,"is_domestic":27},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[29],{"id":5,"filename":30,"title":10,"pages":31,"size_bytes":32,"lang":7,"doc_version":7,"published_at":7,"role":33,"outline_count":34,"thumb":35},"ST-STPSC10H12C.pdf",10,436467,"datasheet",0,"\u002Fthumbs\u002Fb5\u002Fb3\u002Fb5b3cc48f31b17d3f6455f49646310dff413aad96d181c3486b59385103c8fca.jpg",[37,40],{"alias_norm":38,"kind":39},"STPSC10H12","base",{"alias_norm":41,"kind":42},"STPSC10H12CWL","order",[],[45,49],{"name":46,"name_en":47,"path":48},"分立器件","Discretes","discrete",{"name":19,"name_en":20,"path":21},[51,54,58,62,66,69,73,76,79,81,83,86,87,91,95,99,103],{"pn_display":52,"pn_norm":52,"package":7,"summary":53},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":55,"pn_norm":55,"package":56,"summary":57},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":60,"package":7,"summary":61},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":63,"pn_norm":64,"package":65,"summary":61},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":67,"pn_norm":67,"package":7,"summary":68},"STPSC10G065","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":70,"pn_norm":71,"package":7,"summary":72},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":74,"pn_norm":74,"package":75,"summary":68},"STPSC10H065","DPAK",{"pn_display":77,"pn_norm":78,"package":7,"summary":61},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":80,"pn_norm":80,"package":56,"summary":57},"STPSC10H065DLF",{"pn_display":82,"pn_norm":82,"package":7,"summary":68},"STPSC10H065G2",{"pn_display":84,"pn_norm":85,"package":7,"summary":61},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":38,"pn_norm":38,"package":75,"summary":10},{"pn_display":88,"pn_norm":89,"package":75,"summary":90},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":92,"pn_norm":93,"package":94,"summary":90},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":96,"pn_norm":97,"package":94,"summary":98},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":100,"pn_norm":101,"package":7,"summary":102},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":104,"pn_norm":104,"package":7,"summary":105},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[107,110,112,115,118,121,124,127,129,131,134,136],{"pn_display":108,"pn_norm":108,"summary":109},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":111,"pn_norm":111,"summary":109},"GANSPIN612",{"pn_display":113,"pn_norm":113,"summary":114},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":116,"pn_norm":116,"summary":117},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":119,"pn_norm":119,"summary":120},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":122,"pn_norm":122,"summary":123},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":125,"pn_norm":125,"summary":126},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":128,"pn_norm":128,"summary":126},"STDRIVEG211",{"pn_display":130,"pn_norm":130,"summary":126},"STDRIVEG212",{"pn_display":132,"pn_norm":132,"summary":133},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":135,"pn_norm":135,"summary":133},"STDRIVEG600W",{"pn_display":137,"pn_norm":137,"summary":138},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches"]