[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10H065BYTR":3},{"part":4,"mfr":20,"docs":26,"aliases":35,"alts":43,"breadcrumbs":44,"related":50,"more_from_mfr":63},{"id":5,"pn":6,"pn_norm":7,"series":8,"package":8,"lifecycle":9,"summary":10,"params":11,"features":15,"pins":8,"updated_at":16,"category_name":17,"category_name_en":18,"category_path":19},5016,"STPSC10H065BY-TR","STPSC10H065BYTR",null,"active","Automotive 650 V power Schottky silicon carbide diode",[12],[13,14],"工作温度","-40 ~ 175 °C",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":21,"name_en":22,"name_cn":23,"website":24,"is_domestic":25},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[27],{"id":5,"filename":28,"title":29,"pages":30,"size_bytes":31,"lang":8,"doc_version":8,"published_at":8,"role":32,"outline_count":33,"thumb":34},"ST-STPSC10H065BYTR.pdf","Datasheet - STPSC10H065BY-TR -  Automotive 650 V power Schottky silicon carbide diode",11,351515,"datasheet",6,"\u002Fthumbs\u002F2b\u002F95\u002F2b95adc8fabf4a2daca2c457fa0e0667672e22b55d459f1842aa9aa8011f5336.jpg",[36,39,41],{"alias_norm":37,"kind":38},"STPSC10H065","base",{"alias_norm":40,"kind":38},"STPSC10H065B",{"alias_norm":42,"kind":38},"STPSC10H065BY",[],[45,49],{"name":46,"name_en":47,"path":48},"分立器件","Discretes","discrete",{"name":17,"name_en":18,"path":19},[51,54,58,60],{"pn_display":37,"pn_norm":37,"package":52,"summary":53},"DPAK","650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":55,"pn_norm":55,"package":56,"summary":57},"STPSC10H065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":59,"pn_norm":59,"package":8,"summary":53},"STPSC10H065G2",{"pn_display":61,"pn_norm":62,"package":8,"summary":10},"STPSC10H065-Y","STPSC10H065Y",[64,67,71,74,76,80,83,86,89,93,96,99],{"pn_display":65,"pn_norm":65,"summary":66},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":68,"pn_norm":69,"summary":70},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":72,"pn_norm":72,"summary":73},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":75,"pn_norm":75,"summary":73},"GANSPIN612",{"pn_display":77,"pn_norm":78,"summary":79},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":81,"pn_norm":81,"summary":82},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":84,"pn_norm":84,"summary":85},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":87,"pn_norm":87,"summary":88},"SCT011HU75G3AG","Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package",{"pn_display":90,"pn_norm":91,"summary":92},"SCT018H65G3-7","SCT018H65G37","Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package",{"pn_display":94,"pn_norm":94,"summary":95},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":97,"pn_norm":97,"summary":98},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":100,"pn_norm":100,"summary":101},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches"]