[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10G065":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":44,"breadcrumbs":45,"related":51,"more_from_mfr":109},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},5013,"STPSC10G065",null,"active","650 V, 10 A high surge silicon carbide power Schottky diode",[11,14,17],[12,13],"工作温度","-55 ~ 175 °C",[15,16],"VDS","650 V",[18,19],"ID","10 A",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-STPSC10G065.pdf","Datasheet - STPSC10G065 -  650 V, 10 A high surge silicon carbide power Schottky diode",10,533190,"datasheet",12,"\u002Fthumbs\u002Fe3\u002Fc8\u002Fe3c838df575b8a980dcf2f2b26509ab4f602f86092470b758f6f3f9fd43eba02.jpg",[41],{"alias_norm":42,"kind":43},"STPSC10G065D","order",[],[46,50],{"name":47,"name_en":48,"path":49},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[52,55,59,63,67,71,74,77,79,81,84,87,91,94,98,102,106],{"pn_display":53,"pn_norm":53,"package":7,"summary":54},"STPSC10065","650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":56,"pn_norm":56,"package":57,"summary":58},"STPSC10065DLF","POWERFLAT8X8","650 V, 10 A power Schottky silicon carbide diode",{"pn_display":60,"pn_norm":61,"package":7,"summary":62},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",{"pn_display":64,"pn_norm":65,"package":66,"summary":62},"STPSC10C065-Y","STPSC10C065Y","I2PAK",{"pn_display":68,"pn_norm":69,"package":7,"summary":70},"STPSC10G065-Y","STPSC10G065Y","Automotive 650 V, 10 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":72,"package":73,"summary":9},"STPSC10H065","DPAK",{"pn_display":75,"pn_norm":76,"package":7,"summary":62},"STPSC10H065BY-TR","STPSC10H065BYTR",{"pn_display":78,"pn_norm":78,"package":57,"summary":58},"STPSC10H065DLF",{"pn_display":80,"pn_norm":80,"package":7,"summary":9},"STPSC10H065G2",{"pn_display":82,"pn_norm":83,"package":7,"summary":62},"STPSC10H065-Y","STPSC10H065Y",{"pn_display":85,"pn_norm":85,"package":73,"summary":86},"STPSC10H12","1200 V power Schottky silicon carbide diode",{"pn_display":88,"pn_norm":89,"package":73,"summary":90},"STPSC10H12B2-TR","STPSC10H12B2TR","1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":92,"pn_norm":92,"package":93,"summary":86},"STPSC10H12C","TO-247",{"pn_display":95,"pn_norm":96,"package":97,"summary":90},"STPSC10H12G2-TR","STPSC10H12G2TR","D2PAK",{"pn_display":99,"pn_norm":100,"package":97,"summary":101},"STPSC10H12G2Y-TR","STPSC10H12G2YTR","Automotive 1200 V, 10 A, silicon carbide power Schottky diode",{"pn_display":103,"pn_norm":104,"package":7,"summary":105},"STPSC10H12-Y","STPSC10H12Y","Automotive grade 1200 V power Schottky silicon carbide diode",{"pn_display":107,"pn_norm":107,"package":7,"summary":108},"STPSC10TH13TI","Dual 650 V power Schottky silicon carbide diode in series",[110,113,117,121,125,129,132,134,138,142,145,148],{"pn_display":111,"pn_norm":111,"summary":112},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":114,"pn_norm":115,"summary":116},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":118,"pn_norm":119,"summary":120},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":122,"pn_norm":123,"summary":124},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":126,"pn_norm":127,"summary":128},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":130,"pn_norm":130,"summary":131},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":133,"pn_norm":133,"summary":131},"GANSPIN612",{"pn_display":135,"pn_norm":136,"summary":137},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":139,"pn_norm":140,"summary":141},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":143,"pn_norm":143,"summary":144},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":146,"pn_norm":146,"summary":147},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":149,"pn_norm":149,"summary":144},"MASTERGAN4L"]