[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STPSC10065DLF":3},{"part":4,"mfr":28,"docs":34,"aliases":43,"alts":51,"breadcrumbs":52,"related":58,"more_from_mfr":65},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":23,"pins":7,"updated_at":24,"category_name":25,"category_name_en":26,"category_path":27},5010,"STPSC10065DLF",null,"POWERFLAT8X8","active","650 V, 10 A power Schottky silicon carbide diode",[12,15,18,21],[13,14],"工作温度","-40 ~ 175 °C",[16,17],"VDS","650 V",[19,20],"ID","10 A",[22,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":29,"name_en":30,"name_cn":31,"website":32,"is_domestic":33},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[35],{"id":5,"filename":36,"title":37,"pages":38,"size_bytes":39,"lang":7,"doc_version":7,"published_at":7,"role":40,"outline_count":41,"thumb":42},"ST-STPSC10065DLF.pdf","Datasheet -  STPSC10065DLF - 650 V, 10 A power Schottky silicon carbide diode",12,381798,"datasheet",7,"\u002Fthumbs\u002F3e\u002F6c\u002F3e6c717973557ce9756f7ef2ebdb4fcfaa861171382a3ff3b6debbe0cf3e86d3.jpg",[44,47,49],{"alias_norm":45,"kind":46},"STPSC10065","base",{"alias_norm":48,"kind":46},"STPSC10065D",{"alias_norm":50,"kind":46},"STPSC10065DL",[],[53,57],{"name":54,"name_en":55,"path":56},"分立器件","Discretes","discrete",{"name":25,"name_en":26,"path":27},[59,61],{"pn_display":45,"pn_norm":45,"package":7,"summary":60},"650 V, 10 A low VF power Schottky silicon carbide diode",{"pn_display":62,"pn_norm":63,"package":7,"summary":64},"STPSC10065-Y","STPSC10065Y","Automotive 650 V power Schottky silicon carbide diode",[66,69,73,77,81,84,86,90,94,97,100,102],{"pn_display":67,"pn_norm":67,"summary":68},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":70,"pn_norm":71,"summary":72},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":74,"pn_norm":75,"summary":76},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":78,"pn_norm":79,"summary":80},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":82,"pn_norm":82,"summary":83},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":85,"pn_norm":85,"summary":83},"GANSPIN612",{"pn_display":87,"pn_norm":88,"summary":89},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC",{"pn_display":91,"pn_norm":92,"summary":93},"M2TP80M12W2-2LA","M2TP80M12W22LA","Automotive-grade ACEPACK DMT‑32 power module, 3-phase four wire PFC topology, 1200 V, 84 mΩ typ. SiC Power MOSFET with rectifier diode and NTC",{"pn_display":95,"pn_norm":95,"summary":96},"MASTERGAN1L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":98,"pn_norm":98,"summary":99},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":101,"pn_norm":101,"summary":96},"MASTERGAN4L",{"pn_display":103,"pn_norm":103,"summary":104},"MASTERGAN6","650 V GaN half-bridge with gate driver and protections"]