[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:STGAP2SICSAN":3},{"part":4,"mfr":19,"docs":25,"aliases":34,"alts":53,"breadcrumbs":54,"related":60,"more_from_mfr":68},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":8,"lifecycle":9,"summary":10,"params":11,"features":14,"pins":7,"updated_at":15,"category_name":16,"category_name_en":17,"category_path":18},3724,"STGAP2SICSAN",null,"SO-8","active","Galvanically isolated 4 A single gate driver for SiC MOSFETs",[12],[13,8],"封装",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":20,"name_en":21,"name_cn":22,"website":23,"is_domestic":24},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[26],{"id":5,"filename":27,"title":28,"pages":29,"size_bytes":30,"lang":7,"doc_version":7,"published_at":7,"role":31,"outline_count":32,"thumb":33},"ST-STGAP2SICSAN.pdf","Datasheet - STGAP2SICSAN - Galvanically isolated 4 A single gate driver for SiC MOSFETs",22,996661,"datasheet",32,"\u002Fthumbs\u002F74\u002F0d\u002F740da8cee8faeb1b63374b8e1a2985ee82de339859f3c3ecdd5f8f4f15398694.jpg",[35,38,40,42,44,46,48,51],{"alias_norm":36,"kind":37},"STGAP2","base",{"alias_norm":39,"kind":37},"STGAP2S",{"alias_norm":41,"kind":37},"STGAP2SI",{"alias_norm":43,"kind":37},"STGAP2SIC",{"alias_norm":45,"kind":37},"STGAP2SICS",{"alias_norm":47,"kind":37},"STGAP2SICSA",{"alias_norm":49,"kind":50},"STGAP2SICSANC","order",{"alias_norm":52,"kind":50},"STGAP2SICSANCTR",[],[55,59],{"name":56,"name_en":57,"path":58},"分立器件","Discretes","discrete",{"name":16,"name_en":17,"path":18},[61,64,65,66],{"pn_display":62,"pn_norm":62,"package":7,"summary":63},"STGAP2SICD","Galvanically isolated 4 A dual gate driver",{"pn_display":45,"pn_norm":45,"package":7,"summary":10},{"pn_display":47,"pn_norm":47,"package":7,"summary":10},{"pn_display":67,"pn_norm":67,"package":8,"summary":10},"STGAP2SICSN",[69,72,75,78,81,84,87,89,91,94,96,99],{"pn_display":70,"pn_norm":70,"summary":71},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":73,"pn_norm":73,"summary":74},"MASTERGAN2","High power density 600V Half bridge driver with two enhancement mode GaN HEMT",{"pn_display":76,"pn_norm":76,"summary":77},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":79,"pn_norm":79,"summary":80},"SCT025W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package",{"pn_display":82,"pn_norm":82,"summary":83},"SCT040W120G3AG","Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package",{"pn_display":85,"pn_norm":85,"summary":86},"STDRIVEG210","220 V high-speed half-bridge gate driver for GaN power switches",{"pn_display":88,"pn_norm":88,"summary":86},"STDRIVEG211",{"pn_display":90,"pn_norm":90,"summary":86},"STDRIVEG212",{"pn_display":92,"pn_norm":92,"summary":93},"STDRIVEG600","High voltage half-bridge gate driver for GaN transistors",{"pn_display":95,"pn_norm":95,"summary":93},"STDRIVEG600W",{"pn_display":97,"pn_norm":97,"summary":98},"STDRIVEG610","High voltage and high-speed half-bridge gate driver for GaN power switches",{"pn_display":100,"pn_norm":100,"summary":98},"STDRIVEG611"]