[{"data":1,"prerenderedAt":-1},["ShallowReactive",2],{"part:st:SCTHS200N120G3AG":3},{"part":4,"mfr":25,"docs":31,"aliases":40,"alts":46,"breadcrumbs":47,"related":53,"more_from_mfr":54},{"id":5,"pn":6,"pn_norm":6,"series":7,"package":7,"lifecycle":8,"summary":9,"params":10,"features":20,"pins":7,"updated_at":21,"category_name":22,"category_name_en":23,"category_path":24},2590,"SCTHS200N120G3AG",null,"active","Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package",[11,14,17],[12,13],"VDS","1200 V",[15,16],"ID","170 A",[18,19],"RDS(on)","9.3 mΩ",[],"2026-10-10T13:01:01.608Z","SiC \u002F GaN 宽禁带器件","SiC \u002F GaN Wide-Bandgap","discrete.sic",{"slug":26,"name_en":27,"name_cn":28,"website":29,"is_domestic":30},"st","STMicroelectronics","意法半导体","https:\u002F\u002Fwww.st.com",false,[32],{"id":5,"filename":33,"title":34,"pages":35,"size_bytes":36,"lang":7,"doc_version":7,"published_at":7,"role":37,"outline_count":38,"thumb":39},"ST-SCTHS200N120G3AG.pdf","Datasheet -  SCTHS200N120G3AG  - Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package",11,626687,"datasheet",7,"\u002Fthumbs\u002F5d\u002F1a\u002F5d1a9027dcef2462f196babefb9d7d637c720a27d912d2449c71957bf332e2fa.jpg",[41,44],{"alias_norm":42,"kind":43},"SCTHS200N120G3","base",{"alias_norm":45,"kind":43},"SCTHS200N120G3A",[],[48,52],{"name":49,"name_en":50,"path":51},"分立器件","Discretes","discrete",{"name":22,"name_en":23,"path":24},[],[55,58,61,64,68,71,75,79,83,87,90,92],{"pn_display":56,"pn_norm":56,"summary":57},"MASTERGAN4","High power density 600V half-bridge driver with two enhancement mode GaN HEMT",{"pn_display":59,"pn_norm":59,"summary":60},"MASTERGAN4L","600 V half-bridge enhancement mode GaN HEMT with high voltage driver",{"pn_display":62,"pn_norm":62,"summary":63},"STPSC40G12","1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":65,"pn_norm":66,"summary":67},"STPSC40G12-Y","STPSC40G12Y","Automotive 1200 V, 40 A power Schottky high surge silicon carbide diode",{"pn_display":69,"pn_norm":69,"summary":70},"STPSC4H065","650 V, 4 A high surge silicon carbide power Schottky diode",{"pn_display":72,"pn_norm":73,"summary":74},"A2F12M12W2-F1","A2F12M12W2F1","ACEPACK 2 power module, fourpack topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":76,"pn_norm":77,"summary":78},"A2F20M65W3-FC","A2F20M65W3FC","ACEPACK 2 power module, fourpack topology, 650 V, 23 mΩ typ. SiC Power MOSFET gen.3 with NTC and capacitance",{"pn_display":80,"pn_norm":81,"summary":82},"A2U12M12W2-F1C","A2U12M12W2F1C","ACEPACK 2 power module, 3-level topology, 1200 V, 100 A based on SiC Power MOSFET",{"pn_display":84,"pn_norm":85,"summary":86},"A2U12M12W2-F2","A2U12M12W2F2","ACEPACK 2 power module, 3‑level topology, 1200 V, 13 mΩ typ. SiC Power MOSFET gen.2 with NTC",{"pn_display":88,"pn_norm":88,"summary":89},"GANSPIN611","High-voltage half-bridge GaN motor driver",{"pn_display":91,"pn_norm":91,"summary":89},"GANSPIN612",{"pn_display":93,"pn_norm":94,"summary":95},"M2P45M12W2-1LA","M2P45M12W21LA","Automotive‑grade ACEPACK DMT‑32 power module, sixpack topology, 1200 V, 47.5 mΩ typ. SiC Power MOSFET with NTC"]